Structural relaxation and defect annihilation in pure amorphous silicon.
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Characterizing the nature of virtual amorphous silicon.Amorphous silicon exhibits a glass transition.Subnanometer structure and function from ion beams through complex fluidics to fluorescent particles.van den Hoven et al. reply.Erbium in crystal silicon: Segregation and trapping during solid phase epitaxy of amorphous siliconInteratomic potential for silicon defects and disordered phasesTemperature dependent deformation mechanisms in pure amorphous siliconCorrelation of indentation-induced phase transformations with the degree of relaxation of ion-implanted amorphous siliconNew insight into pressure-induced phase transitions of amorphous silicon: the role of impuritiesThe indentation hardness of silicon measured by instrumented indentation: What does it mean?Unexpected short- and medium-range atomic structure of sputtered amorphous silicon upon thermal annealingEffect of oxygen concentration on nanoindentation-induced phase transformations in ion-implanted amorphous siliconStructural characterization of pressure-induced amorphous siliconHigh pressure crystalline phase formation during nanoindentation: Amorphous versus crystalline siliconPhase transformations induced by spherical indentation in ion-implanted amorphous siliconPhase transformations induced in relaxed amorphous silicon by indentation at room temperatureRelaxation in glassforming liquids and amorphous solidsDensity of amorphous SiContribution of vacancies to relaxation in amorphous materials: A kinetic activation-relaxation technique studyAmorphous silicon under mechanical shear deformations: Shear velocity and temperature effectsEvolution of the Potential-Energy Surface of Amorphous SiliconComment on “Boson peak in amorphous silicon: A numerical study”Activated mechanisms in amorphous silicon: An activation-relaxation-technique studyHigh-quality continuous random networksOptimal activation and diffusion paths of perfect events in amorphous siliconIdentification of Relaxation and Diffusion Mechanisms in Amorphous SiliconStructural relaxation and self-diffusion in covalent amorphous solids: Silicon nitride as a model systemDamage evolution in low-energy ion implanted siliconConcentration and ion-energy-independent annealing kinetics during ion-implanted-defect annealingDependence of the structural relaxation of amorphous silicon on implantation temperatureActivation-energy spectrum and structural relaxation dynamics of amorphous silicon
P2860
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P2860
Structural relaxation and defect annihilation in pure amorphous silicon.
description
1991 nî lūn-bûn
@nan
1991年の論文
@ja
1991年学术文章
@wuu
1991年学术文章
@zh-cn
1991年学术文章
@zh-hans
1991年学术文章
@zh-my
1991年学术文章
@zh-sg
1991年學術文章
@yue
1991年學術文章
@zh
1991年學術文章
@zh-hant
name
Structural relaxation and defect annihilation in pure amorphous silicon.
@en
Structural relaxation and defect annihilation in pure amorphous silicon.
@nl
type
label
Structural relaxation and defect annihilation in pure amorphous silicon.
@en
Structural relaxation and defect annihilation in pure amorphous silicon.
@nl
prefLabel
Structural relaxation and defect annihilation in pure amorphous silicon.
@en
Structural relaxation and defect annihilation in pure amorphous silicon.
@nl
P2093
P2860
P356
P1433
P1476
Structural relaxation and defect annihilation in pure amorphous silicon.
@en
P2093
Eaglesham DJ
Jacobson DC
P2860
P304
P356
10.1103/PHYSREVB.44.3702
P407
P577
1991-08-01T00:00:00Z