Polarization-induced hole doping in wide-band-gap uniaxial semiconductor heterostructures.
about
Significant improvements in InGaN/GaN nano-photoelectrodes for hydrogen generation by structure and polarization optimizationTemperature-dependent photoluminescence in light-emitting diodes.Improved p-type conductivity in Al-rich AlGaN using multidimensional Mg-doped superlatticesHidden lattice instabilities as origin of the conductive interface between insulating LaAlO3 and SrTiO3.Breaking Through the Multi-Mesa-Channel Width Limited of Normally Off GaN HEMTs Through Modulation of the Via-Hole-Length.Reducing Mg acceptor activation-energy in Al(0.83)Ga(0.17)N disorder alloy substituted by nanoscale (AlN)₅/(GaN)₁ superlattice using Mg(Ga) δ-doping: Mg local-structure effectUltraviolet Lasers Realized via Electrostatic Doping MethodSpin-polarized wide electron slabs in functionally graded polar oxide heterostructures.Endotoxin-induced structural transformations in liquid crystalline droplets.Direct Observation of the Biaxial Stress Effect on Efficiency Droop in GaN-based Light-emitting Diode under Electrical InjectionImpurity Resonant States p-type Doping in Wide-Band-Gap NitridesX-ray Reciprocal Space Mapping of Graded Al x Ga1 - x N Films and NanowiresHigh Mg effective incorporation in Al-rich AlxGa1 - xN by periodic repetition of ultimate V/III ratio conditions.Aluminum nitride nanowire light emitting diodes: Breaking the fundamental bottleneck of deep ultraviolet light sources.Experimental evidences for reducing Mg activation energy in high Al-content AlGaN alloy by MgGa δ doping in (AlN)m/(GaN)n superlattice.On the Hole Injection for III-Nitride Based Deep Ultraviolet Light-Emitting Diodes.Generalized Mechanism of Field Emission from Nanostructured Semiconductor Film Cathodes.Photoluminescence of Diphenylalanine Peptide Nano/Microstructures: From Mechanisms to Applications.Ultrathin GaN quantum disk nanowire LEDs with sub-250 nm electroluminescence.Strain Driven Spectral Broadening of Pb Ion Exchanged CdS Nanowires.Ultrasensitive Thin-Film-Based Alx Ga1-x N Piezotronic Strain Sensors via Alloying-Enhanced Piezoelectric Potential.AlGaN devices and growth of device structuresP-doping-free III-nitride high electron mobility light-emitting diodes and transistorsEnhanced room-temperature mid-ultraviolet emission from AlGaN/AlN Stranski-Krastanov quantum dotsDipolar-Modulated Charge-Doped Trilayer Organic Semiconductor n-n HeterojunctionGrowth of N-polar GaN on vicinal sapphire substrate by metal organic chemical vapor deposition
P2860
Q27438183-AB53C7F0-A5DD-4987-99D8-487052DEF252Q30358981-F6F4AD5B-C27F-4A08-BE82-0629F3C6FEF7Q30389444-5667D454-D142-4675-AC0D-3E8DE7556786Q33363852-E85BD89E-35EA-4536-A905-4D504EB57FFDQ33808810-B5B75014-A508-4607-A7D7-3467AF401311Q34390496-E1EDA39B-04AA-46F7-A944-A8FE3EC988C9Q34491712-3E3D074D-6641-4279-9137-E40E1F7C1CB0Q36114195-CD7F3D43-911D-4F84-9198-C11C11A47570Q36252979-2486F856-3AA1-47FC-860A-1D6C167FC41BQ36346225-8D097821-B38E-40BB-B45B-274192BF3843Q36499911-3F71FF99-EF4E-46D1-BDC4-E729B07FC84CQ36564188-B245FFDC-197F-4AD7-ABBD-05D021D711AAQ37518868-AE7A3498-2B8E-4FF3-AD5C-1585EB0A20D7Q41870320-D98F5798-3F80-41D3-B7E8-9231A09AFB3BQ42031779-D8288FA3-5D7C-45A3-B6B1-1AB537B594D4Q47095958-435DD170-89E0-401F-9269-C86E858C2855Q47153494-EC2B384E-9143-4B28-8B79-E6EB8905AF46Q47808774-50EDAD96-236D-4014-8396-09F844604345Q51411918-F5A26D6B-92EE-467C-9EC4-9B05BA25B149Q51593483-D0C78564-EA4E-43D2-9FBF-8B6E6DA134BDQ51726724-25B40626-815F-4F78-8F70-7C31B090D85FQ57437807-55A46B2A-4A3A-424C-8F76-006959327F31Q57880290-67BDFF90-4061-428F-802E-9ED8E91F5A7CQ58463181-0800684D-1708-4DF8-9678-4C2A90D54E17Q58920815-DF8C5043-11CD-4DB8-9BC3-E99F36A60FFAQ59324291-08DD035C-3323-4BBB-84A4-73130E0BD646
P2860
Polarization-induced hole doping in wide-band-gap uniaxial semiconductor heterostructures.
description
2010 nî lūn-bûn
@nan
2010年の論文
@ja
2010年学术文章
@wuu
2010年学术文章
@zh-cn
2010年学术文章
@zh-hans
2010年学术文章
@zh-my
2010年学术文章
@zh-sg
2010年學術文章
@yue
2010年學術文章
@zh
2010年學術文章
@zh-hant
name
Polarization-induced hole dopi ...... emiconductor heterostructures.
@en
Polarization-induced hole dopi ...... emiconductor heterostructures.
@nl
type
label
Polarization-induced hole dopi ...... emiconductor heterostructures.
@en
Polarization-induced hole dopi ...... emiconductor heterostructures.
@nl
prefLabel
Polarization-induced hole dopi ...... emiconductor heterostructures.
@en
Polarization-induced hole dopi ...... emiconductor heterostructures.
@nl
P2093
P356
P1433
P1476
Polarization-induced hole dopi ...... emiconductor heterostructures.
@en
P2093
Chuanxin Lian
Debdeep Jena
Huili Xing
John Simon
Vladimir Protasenko
P356
10.1126/SCIENCE.1183226
P407
P577
2010-01-01T00:00:00Z