A low energy oxide-based electronic synaptic device for neuromorphic visual systems with tolerance to device variation.
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Unsupervised Learning by Spike Timing Dependent Plasticity in Phase Change Memory (PCM) SynapsesHierarchical Chunking of Sequential Memory on Neuromorphic Architecture with Reduced Synaptic Plasticity.Acceleration of Deep Neural Network Training with Resistive Cross-Point Devices: Design ConsiderationsElectronic system with memristive synapses for pattern recognitionAnalog Memristive Synapse in Spiking Networks Implementing Unsupervised LearningActivity-dependent synaptic plasticity of a chalcogenide electronic synapse for neuromorphic systems.Face classification using electronic synapsesAtomic View of Filament Growth in Electrochemical Memristive ElementsMetal oxide-resistive memory using graphene-edge electrodes.Geometric conductive filament confinement by nanotips for resistive switching of HfO2-RRAM devices with high performanceOrientation selectivity in a multi-gated organic electrochemical transistor.Proton Conducting Graphene Oxide/Chitosan Composite Electrolytes as Gate Dielectrics for New-Concept Devices.Long-Term Homeostatic Properties Complementary to Hebbian Rules in CuPc-Based Multifunctional Memristor.Emulating the Electrical Activity of the Neuron Using a Silicon Oxide RRAM Cell.Crossbar Nanoscale HfO2-Based Electronic Synapses.Artificial synapse network on inorganic proton conductor for neuromorphic systems.Memory and learning behaviors mimicked in nanogranular SiO2-based proton conductor gated oxide-based synaptic transistors.Memristive neural network for on-line learning and tracking with brain-inspired spike timing dependent plasticity.Flexible three-dimensional artificial synapse networks with correlated learning and trainable memory capability.The Characteristics of Binary Spike-Time-Dependent Plasticity in HfO2-Based RRAM and Applications for Pattern Recognition.Compliance-Free ZrO2/ZrO2 - x /ZrO2 Resistive Memory with Controllable Interfacial Multistate Switching Behaviour.Synaptic Plasticity and Learning Behaviors Mimicked in Single Inorganic Synapses of Pt/HfOx/ZnOx/TiN Memristive System.Highly compact (4F2) and well behaved nano-pillar transistor controlled resistive switching cell for neuromorphic system application.A 2-transistor/1-resistor artificial synapse capable of communication and stochastic learning in neuromorphic systems.A novel artificial synapse with dual modes using bilayer graphene as the bottom electrode.Electrochemical-reaction-induced synaptic plasticity in MoOx-based solid state electrochemical cells.Compliance-Free, Digital SET and Analog RESET Synaptic Characteristics of Sub-Tantalum Oxide Based Neuromorphic Device.Mimicking the brain functions of learning, forgetting and explicit/implicit memories with SrTiO3-based memristive devices.Proton-Conducting Graphene Oxide-Coupled Neuron Transistors for Brain-Inspired Cognitive Systems.Spike-Timing Dependent Plasticity in Unipolar Silicon Oxide RRAM Devices.Memristive Devices with Highly Repeatable Analog States Boosted by Graphene Quantum Dots.Freestanding Artificial Synapses Based on Laterally Proton-Coupled Transistors on Chitosan Membranes.2D MoS2 Neuromorphic Devices for Brain-Like Computational Systems.Flexible Metal Oxide/Graphene Oxide Hybrid Neuromorphic Transistors on Flexible Conducting Graphene Substrates.Light-Emitting Diodes with Hierarchical and Multifunctional Surface Structures for High Light Extraction and an Antifouling Effect.Revival of "dead" memristive devices: case of WO3-x.Multiprotocol-induced plasticity in artificial synapses.Multi-level control of conductive nano-filament evolution in HfO2 ReRAM by pulse-train operations.Neuromorphic computing using non-volatile memory
P2860
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P2860
A low energy oxide-based electronic synaptic device for neuromorphic visual systems with tolerance to device variation.
description
2013 nî lūn-bûn
@nan
2013年の論文
@ja
2013年論文
@yue
2013年論文
@zh-hant
2013年論文
@zh-hk
2013年論文
@zh-mo
2013年論文
@zh-tw
2013年论文
@wuu
2013年论文
@zh
2013年论文
@zh-cn
name
A low energy oxide-based elect ...... tolerance to device variation.
@en
type
label
A low energy oxide-based elect ...... tolerance to device variation.
@en
prefLabel
A low energy oxide-based elect ...... tolerance to device variation.
@en
P2093
P2860
P356
P1433
P1476
A low energy oxide-based elect ...... tolerance to device variation.
@en
P2093
H-S Philip Wong
Jinfeng Kang
Shimeng Yu
Zheng Fang
P2860
P304
P356
10.1002/ADMA.201203680
P407
P577
2013-01-27T00:00:00Z