Switched-capacitor realization of presynaptic short-term-plasticity and stop-learning synapses in 28 nm CMOS.
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Leaky Integrate-and-Fire Neuron Circuit Based on Floating-Gate Integrator.Pulse Shape and Timing Dependence on the Spike-Timing Dependent Plasticity Response of Ion-Conducting Memristors as Synapses.Tunnel junction based memristors as artificial synapses.Implementation of a spike-based perceptron learning rule using TiO2-x memristors.Single pairing spike-timing dependent plasticity in BiFeO3 memristors with a time window of 25 ms to 125 μs.
P2860
Switched-capacitor realization of presynaptic short-term-plasticity and stop-learning synapses in 28 nm CMOS.
description
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2015年の論文
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2015年論文
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2015年論文
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name
Switched-capacitor realization ...... arning synapses in 28 nm CMOS.
@en
type
label
Switched-capacitor realization ...... arning synapses in 28 nm CMOS.
@en
prefLabel
Switched-capacitor realization ...... arning synapses in 28 nm CMOS.
@en
P2093
P2860
P356
P1476
Switched-capacitor realization ...... arning synapses in 28 nm CMOS.
@en
P2093
Christian G Mayr
Georg Ellguth
Johannes Partzsch
Marko Noack
Rene Schüffny
Sebastian Höppner
Stefan Hänzsche
Stefan Scholze
P2860
P356
10.3389/FNINS.2015.00010
P577
2015-02-02T00:00:00Z