N-Channel field-effect transistors with floating gates for extracellular recordings.
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Feasibility Study of Extended-Gate-Type Silicon Nanowire Field-Effect Transistors for Neural Recording.An Integrated ISFET Sensor Array.Optical and Electric Multifunctional CMOS Image Sensors for On-Chip Biosensing Applications.Single cell recordings with pairs of complementary transistorsDesign Optimization of Transistors Used for Neural Recording
P2860
N-Channel field-effect transistors with floating gates for extracellular recordings.
description
2005 nî lūn-bûn
@nan
2005年の論文
@ja
2005年論文
@yue
2005年論文
@zh-hant
2005年論文
@zh-hk
2005年論文
@zh-mo
2005年論文
@zh-tw
2005年论文
@wuu
2005年论文
@zh
2005年论文
@zh-cn
name
N-Channel field-effect transistors with floating gates for extracellular recordings.
@en
type
label
N-Channel field-effect transistors with floating gates for extracellular recordings.
@en
prefLabel
N-Channel field-effect transistors with floating gates for extracellular recordings.
@en
P2093
P1476
N-Channel field-effect transistors with floating gates for extracellular recordings
@en
P2093
Jürgen Moers
Michael Goryll
Simone Böcker-Meffert
Sven Meyburg
P304
P356
10.1016/J.BIOS.2005.03.010
P577
2005-07-18T00:00:00Z