Bending strain engineering in quantum spin hall system for controlling spin currents.

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Evolution of the topological properties of two-dimensional group IVA materials and device design.Nanostructured topological state in bismuth nanotube arrays: inverting bonding-antibonding levels of molecular orbitals.

P2860

Q47199234-B3C0A4CB-852D-4D19-B93E-215230A4D5AA Q47395825-A7644336-DA01-49E9-B907-317ADA22019B

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Bending strain engineering in quantum spin hall system for controlling spin currents.

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http://www.wikidata.org/entity/Q41061995

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2017 nî lūn-bûn

@nan

2017年の論文

@ja

2017年学术文章

@wuu

2017年学术文章

@zh-cn

2017年学术文章

@zh-hans

2017年学术文章

@zh-my

2017年学术文章

@zh-sg

2017年學術文章

@yue

2017年學術文章

@zh

2017年學術文章

@zh-hant

name

Bending strain engineering in quantum spin hall system for controlling spin currents.

@en

type

Item

label

Bending strain engineering in quantum spin hall system for controlling spin currents.

@en

prefLabel

Bending strain engineering in quantum spin hall system for controlling spin currents.

@en

P1476

Bending strain engineering in quantum spin hall system for controlling spin currents.

@en

P2093

Bin Cui

http://www.w3.org/2001/XMLSchema#string

Bing Huang

http://www.w3.org/2001/XMLSchema#string

Feng Liu

http://www.w3.org/2001/XMLSchema#string

Feng Zhai

http://www.w3.org/2001/XMLSchema#string

Jiawei Mei

http://www.w3.org/2001/XMLSchema#string

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Z 2 Topological Order and the Quantum Spin Hall Effect

Simplified LCAO Method for the Periodic Potential Problem

Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set

The Tension of Metallic Films Deposited by Electrolysis

Epitaxial growth of large-gap quantum spin Hall insulator on semiconductor surface.

Nanomechanical architecture of semiconductor nanomembranes.

Strain engineering in semiconducting two-dimensional crystals.

Strain-induced pseudo-magnetic fields greater than 300 tesla in graphene nanobubbles.

Silicon device scaling to the sub-10-nm regime.

Dissipationless quantum spin current at room temperature.

P2888

ncomms15850

P304

15850

http://www.w3.org/2001/XMLSchema#string

P31

scholarly article

P356

10.1038/NCOMMS15850

http://www.w3.org/2001/XMLSchema#string

P407

English

P478

http://www.w3.org/2001/XMLSchema#string

P50

Kyung-Hwan Jin

P577

2017-06-16T00:00:00Z

http://www.w3.org/2001/XMLSchema#dateTime

P6179

1086042705

http://www.w3.org/2001/XMLSchema#string

P698

28621307

http://www.w3.org/2001/XMLSchema#string

P818

1611.09929

http://www.w3.org/2001/XMLSchema#string

P932

5481753

http://www.w3.org/2001/XMLSchema#string

Bending strain engineering in quantum spin hall system for controlling spin currents.

about

P2860

P2860

Bending strain engineering in quantum spin hall system for controlling spin currents.

description

name

type

label

prefLabel

P1433

P1476

P2093

P2860

P2888

P304

P31

P356

P407

P478

P50

P577

P6179

P698

P818

P932

P356

P1433

P1476

P2093

P2860

P2888

P304

P31

P356

P407

P478

P50

P577

P6179

P698

P818

P932