A mixed solution-processed gate dielectric for zinc-tin oxide thin-film transistor and its MIS capacitance.
about
A mixed solution-processed gate dielectric for zinc-tin oxide thin-film transistor and its MIS capacitance.
description
2016 nî lūn-bûn
@nan
2016年の論文
@ja
2016年論文
@yue
2016年論文
@zh-hant
2016年論文
@zh-hk
2016年論文
@zh-mo
2016年論文
@zh-tw
2016年论文
@wuu
2016年论文
@zh
2016年论文
@zh-cn
name
A mixed solution-processed gat ...... istor and its MIS capacitance.
@en
type
label
A mixed solution-processed gat ...... istor and its MIS capacitance.
@en
prefLabel
A mixed solution-processed gat ...... istor and its MIS capacitance.
@en
P2093
P2860
P356
P1433
P1476
A mixed solution-processed gat ...... istor and its MIS capacitance.
@en
P2093
Eui-Jung Yun
Woon-Seop Choi
Young-Jin Kwack
P2860
P2888
P356
10.1038/SREP33576
P407
P577
2016-09-19T00:00:00Z