about
Fabrication of electrically conductive metal patterns at the surface of polymer films by microplasma-based direct writing.Spatial mapping of multimode Brownian motions in high-frequency silicon carbide microdisk resonators.Interferometric Motion Detection in Atomic Layer 2D Nanostructures: Visualizing Signal Transduction Efficiency and Optimization PathwaysTowards single-molecule nanomechanical mass spectrometrySingle- and few-layer WTe2 and their suspended nanostructures: Raman signatures and nanomechanical resonances.Electromechanical coupling and design considerations in single-layer MoS2 suspended-channel transistors and resonators.Embracing structural nonidealities and asymmetries in two-dimensional nanomechanical resonatorsPolytype control of spin qubits in silicon carbide.Surface adsorbate fluctuations and noise in nanoelectromechanical systems.High frequency top-down junction-less silicon nanowire resonators.Low voltage nanoelectromechanical switches based on silicon carbide nanowires.A self-sustaining ultrahigh-frequency nanoelectromechanical oscillator.Parametric nanomechanical amplification at very high frequency.Self-transducing silicon nanowire electromechanical systems at room temperature.Zeptogram-scale nanomechanical mass sensing.Large-scale arrays of single- and few-layer MoS2 nanomechanical resonators.Atomic layer MoS2-graphene van der Waals heterostructure nanomechanical resonators.Ultrawide Band Gap β-Ga2O3 Nanomechanical Resonators with Spatially Visualized Multimode Motion.Carbon nanofiber high frequency nanomechanical resonators.Tuning Optical Signatures of Single- and Few-Layer MoS2 by Blown-Bubble Bulge Straining up to Fracture.Electrothermally Tunable Graphene Resonators Operating at Very High Temperature up to 1200K.Environmental Instability and Degradation of Single- and Few-Layer WTe2 Nanosheets in Ambient Conditions.Resolving and Tuning Mechanical Anisotropy in Black Phosphorus via Nanomechanical Multimode Resonance Spectromicroscopy.Electrically tunable single- and few-layer MoS2 nanoelectromechanical systems with broad dynamic range.Nanoelectromechanical systems: Tuning in to a graphene oscillator.Discerning Black Phosphorus Crystal Orientation and Anisotropy by Polarized Reflectance MeasurementThe study of radiation effects in emerging micro and nano electro mechanical systems (M and NEMs)Anisotropic Thermal Conductivity of Suspended Black Phosphorous Probed by Opto-thermomechanical Resonance SpectromicroscopyA Temperature-Compensated Single-Crystal Silicon-on-Insulator (SOI) MEMS Oscillator with a CMOS Amplifier ChipAtomic Layer GaSe/MoS2 van der Waals Heterostructure Photodiodes with Low Noise and Large Dynamic RangeFrequency Tuning of Graphene Nanoelectromechanical Resonators via Electrostatic GatingAll-dry transferred single- and few-layer MoS2 field effect transistor with enhanced performance by thermal annealingAll-electrical transduction of black phosphorus tunable 2D nanoelectromechanical resonatorsMolybdenum disulfide (MoS 2 ) nanoelectromechanical resonators with on-chip aluminum nitride (AlN) piezoelectric excitationGate-Tuned Temperature in a Hexagonal Boron Nitride-Encapsulated 2-D Semiconductor Device$\beta$ -Ga2O3 NEMS Oscillator for Real-Time Middle Ultraviolet (MUV) Light DetectionEffects of asymmetric Schottky contacts on photoresponse in tungsten diselenide (WSe2) phototransistorHexagonal boron nitride nanomechanical resonators with spatially visualized motionTransforming Ordinary Buildings into Smart Buildings via Low-Cost, Self-Powering Wireless Sensors & Sensor NetworksGallium selenide (GaSe)-molybdenum disulfide (MOS 2 ) van der Waals heterojunction diodes
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Q33460853-8CD29265-328C-40EF-9132-E9BA6C2A4EDDQ35423423-6F250446-B008-4409-B913-51B4811420A8Q36087739-E9EB57D7-7251-429B-B85C-00B9DB36C692Q37355424-A9D181D1-E7CB-4875-AD64-F635C2DCCF33Q38887991-C52C0334-F548-4FD5-B070-ED9F119475C9Q38941575-8753A570-B8A7-4704-9BBB-2F0F2A08AC65Q41868320-F46B6AA4-BE77-494F-88BA-3BFDDA2BB7A1Q42142069-AD3C6257-57B3-4CDA-89B1-0542A991CA85Q42870366-3053E842-3180-42F4-9B17-084419BB64C7Q43559985-14C5FEDA-C7AC-4630-9083-FF0613871393Q46159733-BB5AF5F3-31A3-49DE-B00D-8C7AB893F9C4Q46190694-434AF153-C9BE-4CF3-A12C-747F70AF5D11Q46297508-7EAC4856-98D5-4327-8144-1692B5740ABAQ46347630-C852CB90-EBA3-41C7-92DF-A7965C00FB16Q46355448-F137E123-B1AD-4F2A-8A7A-9F8279C23725Q46899565-50CEFC30-58CF-41B5-8CC1-2EC96DBB5FD7Q47328067-AD49DA13-93A8-456E-AB02-EB145AEC2E55Q47370234-59DE0C46-0A96-454B-A6BC-5D7FCCC11BACQ47797599-89B35092-5B46-4AC0-B7F0-A0F898CA5A58Q48006443-3C641E85-55E7-4EF3-972C-0CFDBDAE6763Q49549786-3D0C7470-C2E9-4BE4-9356-38C1BB079DE3Q51169334-06EF6F1B-7E99-4C38-935B-347F8E4B08A4Q51209449-1A8ED469-238F-47C3-91DC-966916E287B7Q52578901-906DAA15-1224-4844-B3D8-D64D8EC96E5EQ53660354-CC82E4D4-6E54-44AE-9AA3-2B8F1FCDC6B9Q57137202-EDDBEB06-4636-44D8-8BBC-0CAF6B65BB93Q57429091-AA0872FD-A80A-4317-BB4E-D0FC5A1B5D3EQ58105615-EAED25AA-5900-44AE-B7EE-234D29BD0103Q59443656-5DF4D56D-D0BD-4050-9E09-7491E03CC10BQ59443660-212F85F4-C8B2-4B4E-8045-98EB34013E68Q59443664-6A571412-C60B-4156-8483-2E1E9CDAC332Q59443668-668490AF-C00B-4163-8374-72A8F4E1F357Q59443671-47D7F4B1-5CA3-4B77-A3AF-66A7CFD4ED8EQ59443672-1C4A556F-0ED1-431D-AE49-E3DF4AA9042FQ59443675-D8E71B59-E871-434F-A919-2E9DFBEE49A2Q59443678-F74F1D53-932D-4D68-84F7-51CADC5526C4Q59443681-362363DC-BA3D-4E07-83CB-AE0066CADB0BQ59443684-37E0FBBA-29CD-48D8-B8EC-6C4DE9981B7CQ59443688-F9C4DB61-C263-4418-98FF-54E42475E70FQ59443690-55E7176B-FCFA-4F07-BBD1-0BF3641473C4
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description
Electrical Engineer & Computer Scientist
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wetenschapper
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հետազոտող
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name
Philip X-L Feng
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Philip X-L Feng
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Philip X-L Feng
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Philip X-L Feng
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Philip X-L Feng
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label
Philip X-L Feng
@ast
Philip X-L Feng
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Philip X-L Feng
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Philip X-L Feng
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Philip X-L Feng
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Philip Feng
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prefLabel
Philip X-L Feng
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Philip X-L Feng
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Philip X-L Feng
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Philip X-L Feng
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Philip X-L Feng
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P1053
C-8076-2011
P106
P1153
48761150300
P21
P2798
P31
P3829
P496
0000-0002-1083-2391