Modelling and Realization of a Water-Gated Field Effect Transistor (WG-FET) Using 16-nm-Thick Mono-Si Film.
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Modelling and Realization of a Water-Gated Field Effect Transistor (WG-FET) Using 16-nm-Thick Mono-Si Film.
description
2017 nî lūn-bûn
@nan
2017年の論文
@ja
2017年論文
@yue
2017年論文
@zh-hant
2017年論文
@zh-hk
2017年論文
@zh-mo
2017年論文
@zh-tw
2017年论文
@wuu
2017年论文
@zh
2017年论文
@zh-cn
name
Modelling and Realization of a ...... sing 16-nm-Thick Mono-Si Film.
@en
type
label
Modelling and Realization of a ...... sing 16-nm-Thick Mono-Si Film.
@en
prefLabel
Modelling and Realization of a ...... sing 16-nm-Thick Mono-Si Film.
@en
P2860
P1433
P1476
Modelling and Realization of a ...... sing 16-nm-Thick Mono-Si Film.
@en
P2093
Ozan Ertop
P2860
P2888
P356
10.1038/S41598-017-12439-8
P407
P577
2017-09-22T00:00:00Z