Mechanism of Electrochemical Delamination of Two-Dimensional Materials from Their Native Substrates by BubblingCatalyst-Free, Selective Growth of ZnO Nanowires on SiO2 by Chemical Vapor Deposition for Transfer-Free Fabrication of UV Photodetectors.Quantum-dot growth simulation on periodic stress of substrate.Pore-free bubbling delamination of chemical vapor deposited graphene from copper foilsGate-Defined Quantum Devices Realized in InGaAs∕InP by Incorporating a High-κ Layer as Gate DielectricMemristive and Memcapacitive Characteristics of a Au/Ti– $\hbox{HfO}_{2}$-InP/InGaAs DiodeGate-defined double quantum dot with integrated charge sensors realized in InGaAs/InP by incorporating a high-κ dielectricNonlinear electrical properties of Si three-terminal junction devicesGate-defined quantum devices realized on an InGaAs/InP heterostructure by incorporating a high-κ dielectric materialGate-defined quantum-dot devices realized in InGaAs/InP by incorporating a HfO2 layer as gate dielectricA Novel SR Latch Device Realized by Integration of Three-Terminal Ballistic Junctions in InGaAs/InPA sequential logic device realized by integration of in-plane gate transistors in InGaAs∕InPElectrical Properties of Self-Assembled Branched InAs Nanowire JunctionsNovel room-temperature functional analogue and digital nanoelectronic circuits based on three-terminal ballistic junctions and planar quantum-wire transistorsTransport properties of three-terminal ballistic junctions realized by focused ion beam enhanced etching in InGaAs/InPFrequency mixing and phase detection functionalities of three-terminal ballistic junctionsCorrection to Graphene Uniformity Conductance MappingGraphene Conductance Uniformity MappingTemplated growth of covalently bonded three-dimensional carbon nanotube networks originated from grapheneInfluence of graphene synthesizing techniques on the photocatalytic performance of graphene-TiO2 nanocompositesTransfer-Free Graphene-Like Thin Films on GaN LED Epiwafers Grown by PECVD Using an Ultrathin Pt Catalyst for Transparent Electrode ApplicationsThe Growth of Graphene on Ni-Cu Alloy Thin Films at a Low Temperature and Its Carbon Diffusion MechanismMetal-Catalyst-Free Growth of Patterned Graphene on SiO2 Substrates by Annealing Plasma-Induced Cross-Linked Parylene for Optoelectronic Device ApplicationsHigh Quality Graphene Thin Films Synthesized by Glow Discharge Method in A Chemical Vapor Deposition System Using Solid Carbon Source
P50
Q42138338-943B328E-79AD-4148-BCB9-05EDC23F6595Q50247697-726B03A7-BB57-4B4E-9EED-11A9B05C59CEQ50754996-19BA3EEB-CEE6-4037-8E88-F68DE523F178Q57798131-CE907D48-DEAA-41AD-9866-B58DEEE66FCBQ59439325-DF479824-585D-4953-8186-DEE7269F9D3BQ59439331-F71EE8F2-A4F3-4EA9-AE4D-03EA29D79286Q59439360-B273301E-8FA5-4B46-8455-3C702D2E3436Q59439366-D8359D73-80E1-4C74-B3E5-18632C32CECCQ59439382-DE7413C5-7847-49BF-BCC6-47F8E397A292Q59439385-FDF0028D-5F55-4115-8610-FE0E6ECF1471Q59439406-ECB9E36D-749D-449C-9D40-2519A3D876E9Q59439408-F51C84BA-A592-4072-896E-CC611AA74D6CQ59439413-AF6EC08A-5748-4852-8B93-E19991D37999Q59439425-359CE9C6-5B4F-4835-B105-E1509BECF98EQ59439435-F99D2C02-4209-4E14-BF87-B5824AB42AE3Q59439443-E8013436-6A67-4044-9114-C52D73E6DA43Q61803083-8CA370E5-7635-491E-8D6B-787EB464B0B0Q61803258-C3F8316F-05E7-48CD-BD6C-E54BE3980788Q83465575-0D11CB64-86BD-42E6-B88B-AEFB28017C92Q87249477-EE70EC95-8BA0-4135-A42D-79BA815F037AQ90988350-93004A53-EC95-4D45-909A-BBEF46B50F7EQ91341742-B3BC5502-B44D-4963-9748-7BBCCD2DE5B5Q92592535-6F774A5F-DAC1-4F96-BB42-03B9322BDFB4Q94480505-373C694B-3832-4C7B-AD42-B1752F87C8FA
P50
description
onderzoeker
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researcher
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հետազոտող
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name
Jie Sun
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Jie Sun
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Jie Sun
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Jie Sun
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Jie Sun
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Jie Sun
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Jie Sun
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Sun Jie
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Jie Sun
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Jie Sun
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Jie Sun
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P1006
P214
P1006
P1053
E-8239-2011
P106
P2006
485D0AC6-FF12-4353-876D-0B935098EF81
P214
P2456
54/5330-12
P31
P3829
P496
0000-0002-6479-7771
P7859
lccn-n2017013067