Investigation of the InAs/GaAs Quantum Dots' Size: Dependence on the Strain Reducing Layer's Position.
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Investigation of the InAs/GaAs Quantum Dots' Size: Dependence on the Strain Reducing Layer's Position.
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2015 nî lūn-bûn
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2015年の論文
@ja
2015年論文
@yue
2015年論文
@zh-hant
2015年論文
@zh-hk
2015年論文
@zh-mo
2015年論文
@zh-tw
2015年论文
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2015年论文
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2015年论文
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name
Investigation of the InAs/GaAs ...... ain Reducing Layer's Position.
@en
Investigation of the InAs/GaAs ...... ain Reducing Layer's Position.
@nl
type
label
Investigation of the InAs/GaAs ...... ain Reducing Layer's Position.
@en
Investigation of the InAs/GaAs ...... ain Reducing Layer's Position.
@nl
prefLabel
Investigation of the InAs/GaAs ...... ain Reducing Layer's Position.
@en
Investigation of the InAs/GaAs ...... ain Reducing Layer's Position.
@nl
P2093
P2860
P50
P356
P1433
P1476
Investigation of the InAs/GaAs ...... ain Reducing Layer's Position.
@en
P2093
Hassen Maaref
Larbi Sfaxi
Manel Souaf
Mourad Baira
P2860
P304
P356
10.3390/MA8084699
P577
2015-07-24T00:00:00Z