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Capacity based nondestructive readout for complementary resistive switchesDirect observation of charge transfer in solid electrolyte for electrochemical metallization memory.Chemically-inactive interfaces in thin film Ag/AgI systems for resistive switching memories.An associative capacitive network based on nanoscale complementary resistive switches for memory-intensive computing.Nanoscale Plasmon-Enhanced Spectroscopy in Memristive Switches.Electrochemical dynamics of nanoscale metallic inclusions in dielectrics.Switching kinetics of electrochemical metallization memory cells.Beyond von Neumann--logic operations in passive crossbar arrays alongside memory operations.Quantum conductance and switching kinetics of AgI-based microcrossbar cellsNanoionic transport and electrochemical reactions in resistively switching silicon dioxide
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P50
description
hulumtues
@sq
onderzoeker
@nl
researcher
@en
հետազոտող
@hy
name
Stefan Tappertzhofen
@ast
Stefan Tappertzhofen
@en
Stefan Tappertzhofen
@es
Stefan Tappertzhofen
@nl
Stefan Tappertzhofen
@sl
type
label
Stefan Tappertzhofen
@ast
Stefan Tappertzhofen
@en
Stefan Tappertzhofen
@es
Stefan Tappertzhofen
@nl
Stefan Tappertzhofen
@sl
prefLabel
Stefan Tappertzhofen
@ast
Stefan Tappertzhofen
@en
Stefan Tappertzhofen
@es
Stefan Tappertzhofen
@nl
Stefan Tappertzhofen
@sl
P106
P21
P31
P496
0000-0003-3747-5627