A quantum chemical study on gas phase decomposition pathways of triethylgallane (TEG, Ga(C2H5)3) and tert-butylphosphine (TBP, PH2(t-C4H9)) under MOVPE conditions.
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Surface Chemistry of tert-Butylphosphine (TBP) on Si(001) in the Nucleation Phase of Thin-Film Growth.A model for carbon incorporation from trimethyl gallium in chemical vapor deposition of gallium nitrideGas phase chemical vapor deposition chemistry of triethylboron probed by boron–carbon thin film deposition and quantum chemical calculations
P2860
A quantum chemical study on gas phase decomposition pathways of triethylgallane (TEG, Ga(C2H5)3) and tert-butylphosphine (TBP, PH2(t-C4H9)) under MOVPE conditions.
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name
A quantum chemical study on ga ...... C4H9)) under MOVPE conditions.
@en
A quantum chemical study on ga ...... C4H9)) under MOVPE conditions.
@nl
type
label
A quantum chemical study on ga ...... C4H9)) under MOVPE conditions.
@en
A quantum chemical study on ga ...... C4H9)) under MOVPE conditions.
@nl
prefLabel
A quantum chemical study on ga ...... C4H9)) under MOVPE conditions.
@en
A quantum chemical study on ga ...... C4H9)) under MOVPE conditions.
@nl
P2860
P356
P1476
A quantum chemical study on ga ...... C4H9)) under MOVPE conditions.
@en
P2093
Andreas Stegmüller
P2860
P304
17018-17029
P356
10.1039/C4CP01584C
P407
P577
2014-07-09T00:00:00Z