Solution processed tungsten oxide interfacial layer for efficient hole-injection in quantum dot light-emitting diodes.
about
Synthesis of WOn -WX2 (n=2.7, 2.9; X=S, Se) Heterostructures for Highly Efficient Green Quantum Dot Light-Emitting Diodes.A New Facile Synthesis of Tungsten Oxide from Tungsten Disulfide: Structure Dependent Supercapacitor and Negative Differential Resistance Properties.Patterning fluorescent quantum dot nanocomposites by reactive inkjet printing.Wafer-scale single-domain-like graphene by defect-selective atomic layer deposition of hexagonal ZnO.Fabrication of fluorescent poly(l-lactide-co-caprolactone) fibers with quantum-dot incorporation from emulsion electrospinning for chloramphenicol detectionSolution-processed inorganic copper(i) thiocyanate as a hole injection layer for high-performance quantum dot-based light-emitting diodes
P2860
Solution processed tungsten oxide interfacial layer for efficient hole-injection in quantum dot light-emitting diodes.
description
2013 nî lūn-bûn
@nan
2013年の論文
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2013年学术文章
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2013年学术文章
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2013年学术文章
@zh-hans
2013年学术文章
@zh-my
2013年学术文章
@zh-sg
2013年學術文章
@yue
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name
Solution processed tungsten ox ...... tum dot light-emitting diodes.
@en
Solution processed tungsten ox ...... tum dot light-emitting diodes.
@nl
type
label
Solution processed tungsten ox ...... tum dot light-emitting diodes.
@en
Solution processed tungsten ox ...... tum dot light-emitting diodes.
@nl
prefLabel
Solution processed tungsten ox ...... tum dot light-emitting diodes.
@en
Solution processed tungsten ox ...... tum dot light-emitting diodes.
@nl
P2093
P2860
P50
P356
P1433
P1476
Solution processed tungsten ox ...... tum dot light-emitting diodes.
@en
P2093
Evren Mutlugun
Hilmi Volkan Demir
Kheng Swee Leck
Xuyong Yang
P2860
P304
P356
10.1002/SMLL.201301199
P577
2013-08-05T00:00:00Z