High performance amorphous ZnMgO/carbon nanotube composite thin-film transistors with a tunable threshold voltage.

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Deep ultraviolet laser direct write for patterning sol-gel InGaZnO semiconducting micro/nanowires and improving field-effect mobility Transparent megahertz circuits from solution-processed composite thin films.

P2860

Q35642761-5705E28D-421A-4969-8C50-0B7CBD8025D9 Q43811820-E4FA4719-819D-4398-82B2-4E533C40773A

P2860

High performance amorphous ZnMgO/carbon nanotube composite thin-film transistors with a tunable threshold voltage.

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http://www.wikidata.org/entity/Q44091543

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2013 nî lūn-bûn

@nan

2013年の論文

@ja

2013年学术文章

@wuu

2013年学术文章

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2013年学术文章

@zh-cn

2013年学术文章

@zh-hans

2013年学术文章

@zh-my

2013年学术文章

@zh-sg

2013年學術文章

@yue

2013年學術文章

@zh-hant

name

High performance amorphous ZnM ...... h a tunable threshold voltage.

@en

High performance amorphous ZnM ...... h a tunable threshold voltage.

@nl

type

Item

label

High performance amorphous ZnM ...... h a tunable threshold voltage.

@en

High performance amorphous ZnM ...... h a tunable threshold voltage.

@nl

prefLabel

High performance amorphous ZnM ...... h a tunable threshold voltage.

@en

High performance amorphous ZnM ...... h a tunable threshold voltage.

@nl

P1476

High performance amorphous ZnM ...... th a tunable threshold voltage

@en

P2093

Bo Cai

http://www.w3.org/2001/XMLSchema#string

Changzhong Jiang

http://www.w3.org/2001/XMLSchema#string

Chunlan Wang

http://www.w3.org/2001/XMLSchema#string

Jinchai Li

http://www.w3.org/2001/XMLSchema#string

Lei Liao

http://www.w3.org/2001/XMLSchema#string

Wei Liu

http://www.w3.org/2001/XMLSchema#string

Xiangfeng Duan

http://www.w3.org/2001/XMLSchema#string

Xingqiang Liu

http://www.w3.org/2001/XMLSchema#string

Yongquan Qu

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P2860

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Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances

Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors.

Low-voltage organic field-effect transistors and inverters enabled by ultrathin cross-linked polymers as gate dielectrics.

High performance solution-processed indium oxide thin-film transistors.

Importance of controlling nanotube density for highly sensitive and reliable biosensors functional in physiological conditions.

Low-temperature, high-performance solution-processed metal oxide thin-film transistors formed by a ‘sol–gel on chip’ process.

High-performance flexible transparent thin-film transistors using a hybrid gate dielectric and an amorphous zinc indium tin oxide channel

Carbon Nanotube Field Effect Transistors with Suspended Graphene Gates

P304

2830-2834

http://www.w3.org/2001/XMLSchema#string

P31

scholarly article

P356

10.1039/C3NR34222K

http://www.w3.org/2001/XMLSchema#string

P407

English

P433

http://www.w3.org/2001/XMLSchema#string

P478

http://www.w3.org/2001/XMLSchema#string

P50

Zhiyong Fan

Shishang Guo

Xiangheng Xiao

P577

2013-04-01T00:00:00Z

http://www.w3.org/2001/XMLSchema#dateTime

P5875

235740665

http://www.w3.org/2001/XMLSchema#string

P698

23443668

http://www.w3.org/2001/XMLSchema#string

P921

thin film

carbon nanotube

High performance amorphous ZnMgO/carbon nanotube composite thin-film transistors with a tunable threshold voltage.

about

P2860

P2860

High performance amorphous ZnMgO/carbon nanotube composite thin-film transistors with a tunable threshold voltage.

description

name

type

label

prefLabel

P1433

P1476

P2093

P2860

P304

P31

P356

P407

P433

P478

P50

P577

P5875

P698

P921

P356

P1433

P1476

P2093

P2860

P304

P31

P356

P407

P433

P478

P50

P577

P5875

P698

P921