about
Asymmetry-induced resistive switching in Ag-Ag2S-Ag memristors enabling a simplified atomic-scale memory designAn atomic symmetry-controlled thermal switch.Single-molecule electronics: from chemical design to functional devices.Advance of Mechanically Controllable Break Junction for Molecular Electronics.A kilobyte rewritable atomic memory.Controlling the thermoelectric effect by mechanical manipulation of the electron's quantum phase in atomic junctions.Controlled switching of single-molecule junctions by mechanical motion of a phenyl ring.Plasmon-induced nanoscale quantised conductance filaments.Evidence for non-conservative current-induced forces in the breaking of Au and Pt atomic chains.Quantized thermal transport in single-atom junctions.Conformation-based signal transfer and processing at the single-molecule level.Non-exponential resistive switching in Ag2S memristors: a key to nanometer-scale non-volatile memory devices.A fast operation of nanometer-scale metallic memristors: highly transparent conductance channels in Ag2S devices.Evaluation of the energy barrier for failure of Au atomic contact based on temperature dependent current-voltage characteristics.Current-induced forces and hot spots in biased nanojunctions.
P2860
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P2860
description
2013 nî lūn-bûn
@nan
2013年の論文
@ja
2013年学术文章
@wuu
2013年学术文章
@zh-cn
2013年学术文章
@zh-hans
2013年学术文章
@zh-my
2013年学术文章
@zh-sg
2013年學術文章
@yue
2013年學術文章
@zh
2013年學術文章
@zh-hant
name
A current-driven single-atom memory.
@en
A current-driven single-atom memory.
@nl
type
label
A current-driven single-atom memory.
@en
A current-driven single-atom memory.
@nl
prefLabel
A current-driven single-atom memory.
@en
A current-driven single-atom memory.
@nl
P2093
P2860
P356
P1476
A current-driven single-atom memory.
@en
P2093
P2860
P2888
P304
P356
10.1038/NNANO.2013.170
P577
2013-09-01T00:00:00Z
P5875
P6179
1050564642