Interface Engineering with MoS2 -Pd Nanoparticles Hybrid Structure for a Low Voltage Resistive Switching Memory.

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Interface Engineering with MoS2 -Pd Nanoparticles Hybrid Structure for a Low Voltage Resistive Switching Memory.

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2017 nî lūn-bûn

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2017年の論文

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2017年学术文章

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2017年学术文章

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2017年学术文章

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2017年学术文章

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2017年学术文章

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2017年学术文章

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2017年學術文章

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2017年學術文章

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name

Interface Engineering with MoS ...... ge Resistive Switching Memory.

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Interface Engineering with MoS ...... ge Resistive Switching Memory.

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Interface Engineering with MoS ...... ge Resistive Switching Memory.

@en

Interface Engineering with MoS ...... ge Resistive Switching Memory.

@nl

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Interface Engineering with MoS ...... ge Resistive Switching Memory.

@en

Interface Engineering with MoS ...... ge Resistive Switching Memory.

@nl

P1476

Interface Engineering with MoS ...... ge Resistive Switching Memory.

@en

P2093

Hai-Ming Zhao

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He Tian

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Tian-Ling Ren

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Tian-Yu Zhang

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Wei-Quan Mao

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Xue-Feng Wang

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Yan-Cong Qiao

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Yi Yang

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Yu Pang

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Yu-Xing Li

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P2860

MoS2 Nanosheet-Pd Nanoparticle Composite for Highly Sensitive Room Temperature Detection of Hydrogen

Raman study and lattice dynamics of single molecular layers of MoS2.

Emerging photoluminescence in monolayer MoS2.

Single-layer MoS2 transistors.

Synthesis of large-area MoS2 atomic layers with chemical vapor deposition.

Preparation and applications of mechanically exfoliated single-layer and multilayer MoS₂ and WSe₂ nanosheets.

Monitoring oxygen movement by Raman spectroscopy of resistive random access memory with a graphene-inserted electrode.

Sensing behavior of atomically thin-layered MoS2 transistors.

Highly transparent low resistance ZnO/Ag nanowire/ZnO composite electrode for thin film solar cells.

Flexible Transparent Electronic Gas Sensors.

P31

scholarly article

P356

10.1002/SMLL.201702525

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P577

2017-12-04T00:00:00Z

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P698

29205799

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