Monolayer behaviour in bulk ReS2 due to electronic and vibrational decoupling.
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Robust Direct Bandgap Characteristics of One- and Two-Dimensional ReS2A two-dimensional semiconductor transistor with boosted gate control and sensing ability.Negative Poisson's ratio in 1T-type crystalline two-dimensional transition metal dichalcogenides.Optically decomposed near-band-edge structure and excitonic transitions in Ga₂S₃.Integrated digital inverters based on two-dimensional anisotropic ReS2 field-effect transistors.Revealing Optical Properties of Reduced-Dimensionality Materials at Relevant Length Scales.Electric-field-induced strong enhancement of electroluminescence in multilayer molybdenum disulfide.Pressure-driven dome-shaped superconductivity and electronic structural evolution in tungsten ditelluride.Birefringence-Directed Raman Selection Rules in 2D Black Phosphorus Crystals.Selectively tunable optical Stark effect of anisotropic excitons in atomically thin ReS2.Polaritons in layered two-dimensional materials.Nonlinear Saturable and Polarization-induced Absorption of Rhenium Disulfide.Mapping of Low-Frequency Raman Modes in CVD-Grown Transition Metal Dichalcogenides: Layer Number, Stacking Orientation and Resonant EffectsLattice Dynamics of the Rhenium and Technetium Dichalcogenides.Disorder engineering and conductivity dome in ReS2 with electrolyte gating.Twinned growth behaviour of two-dimensional materialsBand engineering for novel two-dimensional atomic layers.Two-dimensional transition metal dichalcogenide alloys: preparation, characterization and applications.Interfacial properties of borophene contacts with two-dimensional semiconductors.Fundamentals of lateral and vertical heterojunctions of atomically thin materials.Two-dimensional inorganic analogues of graphene: transition metal dichalcogenides.Large-Size 2D β-Cu2 S Nanosheets with Giant Phase Transition Temperature Lowering (120 K) Synthesized by a Novel Method of Super-Cooling Chemical-Vapor-Deposition.Polytypism and unexpected strong interlayer coupling in two-dimensional layered ReS2.Sulfur vacancy activated field effect transistors based on ReS2 nanosheets.High-performance flexible photodetectors based on GaTe nanosheets.Electronic bandstructure and van der Waals coupling of ReSe2 revealed by high-resolution angle-resolved photoemission spectroscopy.Robust band gap of TiS3 nanofilms.Influence of transition metal doping on the electronic and optical properties of ReS2 and ReSe2 monolayers.Electronic and Optoelectronic Applications Based on 2D Novel Anisotropic Transition Metal Dichalcogenides.Anisotropic attosecond charge carrier dynamics and layer decoupling in quasi-2D layered SnS2.Synthesis of Large-Size 1T' ReS2x Se2(1-x) Alloy Monolayer with Tunable Bandgap and Carrier Type.Thermally Induced Bending of ReS2 Nanowalls.Black-Phosphorus-Based Orientation-Induced Diodes.Universal Method for Large-Scale Synthesis of Layered Transition Metal Dichalcogenides.A study on the electronic and interfacial structures of monolayer ReS2-metal contacts.Environmental stability of 2D anisotropic tellurium containing nanomaterials: anisotropic to isotropic transition.High Mobility 2D Palladium Diselenide Field-Effect Transistors with Tunable Ambipolar Characteristics.3D Anisotropic Thermal Conductivity of Exfoliated Rhenium Disulfide.Controlling Structural Anisotropy of Anisotropic 2D Layers in Pseudo-1D/2D Material Heterojunctions.Atomic Layer Deposition of Rhenium Disulfide.
P2860
Q30402928-67776E01-D003-4C46-A264-42FFF8931FC0Q33708118-560A6A34-7C14-4323-BE5A-08D471761A24Q33762779-86D1BFB5-608B-48B7-9218-039AC3FEEC16Q34072775-96B6EDB3-4F79-4646-86D0-DA129E2260BEQ35608885-B93F1255-77E0-4C75-AEE5-8797198D6BAAQ35762263-4B1C59FD-DC63-485D-A0FE-979DC7E3ECB3Q35864981-3F1227C3-9423-45C4-8AA5-E02B37C60F7DQ35916980-4879AC83-FBD7-47B9-B759-FA66E6A5E807Q35974799-783740FA-306F-4622-88F9-4BB880105360Q36195815-0958EB93-3C80-4E79-9E2B-5B90162BCC71Q36205366-6F91D0D9-643D-4D80-9327-32FDF30105D6Q36239849-F9332903-0C47-4C6D-90D1-BF645F5420F1Q36499393-9A7ED081-4846-461C-AE7E-35AF80E75B1EQ36910327-CC9ABD52-8A6A-45AA-BC4C-C14023F5836EQ37163450-DC0C6871-76C3-46B7-9F18-6519346AF905Q37533337-F30A2235-8592-45DB-AB5E-965E5A64C54FQ38289160-1FA0F884-A966-415D-A427-649D901E71D0Q38617886-8D7CE9C7-B60D-4CA7-8DF8-F2A2D548CB79Q38638508-55A5EF75-C28B-46ED-93FA-748F9EB22AD4Q38718408-035AEF6F-326A-4B03-9C5E-70184B326909Q38833372-74569DFF-7D8E-4E49-A142-F181A34A2157Q38839371-4A390F15-E51C-4F6E-B383-6C9E3EE6C734Q38887321-637BC37D-6696-4763-B39A-CEFA3DC280E6Q38965894-BDCCF0AC-72EA-4997-BF5E-5A47EA5E26B4Q39024990-6ECC5942-EF6A-4F54-BDBE-8AFD41477EB6Q40986289-DDEA1AE2-93BD-41A6-9B77-621208D9522AQ46076814-1365E9B1-B996-48D7-929C-6AAA4ABD54B9Q46341672-96078D04-7FC6-4E5A-9AB4-828DC85D0F05Q47133679-37AFDF6F-333E-4614-983D-910C1844F408Q47138086-304CB47F-841C-4B3E-A470-402F25320037Q47180523-B20B3DA8-78F4-4262-8FAB-A272641028DAQ47283775-B9857B4F-9857-4E1A-B17E-960E9840326FQ47320674-6452E046-9A45-4952-A27D-377153EC0F8FQ47340778-4EACAF74-65DA-416A-99AD-DC3F1808991CQ47620744-959DA93D-549E-44A7-9AC8-7B88EC535331Q47794022-2132608C-87A3-47C4-9D16-6418EBE45A3FQ47904348-0B231112-CFB5-4854-A833-870B28DD8423Q47908757-AEF70314-A5CE-4B7A-9C80-D993120ECA00Q47941526-C0FB21B7-B22B-4123-9302-D4A842FD5CC6Q48044160-0223433E-7EAD-45AC-A0BD-4717D9F95EF7
P2860
Monolayer behaviour in bulk ReS2 due to electronic and vibrational decoupling.
description
2014 nî lūn-bûn
@nan
2014年の論文
@ja
2014年学术文章
@wuu
2014年学术文章
@zh-cn
2014年学术文章
@zh-hans
2014年学术文章
@zh-my
2014年学术文章
@zh-sg
2014年學術文章
@yue
2014年學術文章
@zh
2014年學術文章
@zh-hant
name
Monolayer behaviour in bulk ReS2 due to electronic and vibrational decoupling.
@en
Monolayer behaviour in bulk ReS2 due to electronic and vibrational decoupling.
@nl
type
label
Monolayer behaviour in bulk ReS2 due to electronic and vibrational decoupling.
@en
Monolayer behaviour in bulk ReS2 due to electronic and vibrational decoupling.
@nl
prefLabel
Monolayer behaviour in bulk ReS2 due to electronic and vibrational decoupling.
@en
Monolayer behaviour in bulk ReS2 due to electronic and vibrational decoupling.
@nl
P2093
P50
P356
P1476
Monolayer behaviour in bulk ReS2 due to electronic and vibrational decoupling.
@en
P2093
Changhyun Ko
D Frank Ogletree
Jinyuan Yan
Sefaattin Tongay
Shaul Aloni
Shushen Li
P2888
P356
10.1038/NCOMMS4252
P407
P577
2014-01-01T00:00:00Z
P5875
P6179
1048560519