about
Quantum engineering at the silicon surface using dangling bondsEfficient nitrogen incorporation in ZnO nanowiresEndotoxin-induced structural transformations in liquid crystalline droplets.Enhanced optoelectronic quality of perovskite thin films with hypophosphorous acid for planar heterojunction solar cells.Configurational and residual entropies of nonergodic crystals and the entropy's behavior on glass formation.Extreme stiffness tunability through the excitation of nonlinear defect modes.Properties and potential optoelectronic applications of lead halide perovskite nanocrystals.Constructing bulk defective perovskite SrTiO3 nanocubes for high performance photocatalysts.Distortion and segregation in a dislocation core region at atomic resolution.Atomic structure of interface states in silicon heterojunction solar cells.Local to extended transitions of resonant defect modes.Advances in electronic structure methods for defects and impurities in solidsForwarding Molecular Design of Heterogeneous CatalystsEngineering heterogeneous semiconductors for solar water splittingNearly-free electronlike surface resonance of aβ−Si3N4(0001)/Si(111)−8×8interfaceImpurity Modulated Static Linear and First Nonlinear Polarizabilities of Doped Quantum DotsTuning electronic properties of transition-metal dichalcogenides via defect chargeAdvances in surface passivation of c-Si solar cells
P2860
Q34646798-2F42779C-1947-4C90-A601-1ECF5EF31A96Q35989419-19A97885-5689-4497-8998-CE3F4DB086DFQ36252979-22C58683-05AF-44F1-96EF-823532CF6476Q36360685-C958C549-C0BF-4F9A-8280-4D2A84C68FAEQ41609268-2659D662-6776-4513-91AC-71D89AA39A83Q44497884-2A7F67FA-D345-41C8-928F-95679290FA78Q48330999-6CDCD529-002A-4B88-A83E-46DC0466F422Q50218528-AEAE35B5-2AAC-4525-9EF8-63B0FE56AB51Q51332625-B478BBBA-F387-4315-B2F4-7A83767E503AQ52884310-2E9D477F-BC98-47E6-A32B-B3901ADA016FQ53392384-E3CBE6CC-B581-404B-956A-5B5A0F752C37Q56423422-968A3C8B-BC93-4BCA-B553-14ED1D58473FQ57068974-022E0895-CEDC-4B63-AF8E-B227E1BE3FD5Q57654271-4D2A1F51-13B3-4075-A6C3-D8B95527B7D6Q57963083-1AFA8C52-3EA2-4FAA-9660-F7E7177BC439Q58692798-E8ECA5B8-1DE8-4711-B1D3-1F0C5800F564Q58751535-5ACF8680-E582-495B-BC48-1859EB0A175CQ59273072-5B364238-B375-49EA-9ED6-13CE7DE24A4F
P2860
description
1998 nî lūn-bûn
@nan
1998年の論文
@ja
1998年学术文章
@wuu
1998年学术文章
@zh
1998年学术文章
@zh-cn
1998年学术文章
@zh-hans
1998年学术文章
@zh-my
1998年学术文章
@zh-sg
1998年學術文章
@yue
1998年學術文章
@zh-hant
name
Defects in semiconductors: some fatal, some vital
@en
Defects in semiconductors: some fatal, some vital
@nl
type
label
Defects in semiconductors: some fatal, some vital
@en
Defects in semiconductors: some fatal, some vital
@nl
prefLabel
Defects in semiconductors: some fatal, some vital
@en
Defects in semiconductors: some fatal, some vital
@nl
P1433
P1476
Defects in semiconductors: some fatal, some vital
@en
P2093
Queisser HJ
P304
P356
10.1126/SCIENCE.281.5379.945
P407
P577
1998-08-01T00:00:00Z