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On the Hole Injection for III-Nitride Based Deep Ultraviolet Light-Emitting Diodes.Formation of "Steady Size" State for Accurate Size Control of CdSe and CdS Quantum Dots.Synthesis of Quantum Dot-ZnS Nanosheet Inorganic Assembly with Low Thermal Fluorescent Quenching for LED Application.Nearly Efficiency-Droop-Free AlGaN-Based Ultraviolet Light-Emitting Diodes with a Specifically Designed Superlattice p-Type Electron Blocking Layer for High Mg Doping Efficiency.On the p-AlGaN/n-AlGaN/p-AlGaN Current Spreading Layer for AlGaN-based Deep Ultraviolet Light-Emitting DiodesInvestigation of p-type depletion doping for InGaN/GaN-based light-emitting diodesA charge inverter for III-nitride light-emitting diodesErratum: “A charge inverter for III-nitride light-emitting diodes” [Appl. Phys. Lett. 108, 133502 (2016)]On the hole accelerator for III-nitride light-emitting diodesA hole modulator for InGaN/GaN light-emitting diodesHighly efficient Mn-doped CsPb(Cl/Br)3 quantum dots for white light-emitting diodesWhite light-emitting diodes based on carbon dots and Mn-doped CsPbMnCl3 nanocrystalsEnhanced Photoresponse of Indium-Doped Tin Disulfide NanosheetsOptimization Strategy of 4H-SiC Separated Absorption Charge and Multiplication Avalanche Photodiode Structure for High Ultraviolet Detection EfficiencyImproving the Current Spreading by Locally Modulating the Doping Type in the n-AlGaN Layer for AlGaN-Based Deep Ultraviolet Light-Emitting DiodesOrange to Red, Emission-Tunable Mn-Doped Two-Dimensional Perovskites with High Luminescence and Stability
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Q47095958-89B2C072-C63B-42BD-86D9-E6E16AACEEFBQ47200260-40223C7A-4540-4A5A-89CE-5915D82F09A3Q47404339-285940F7-0F22-41EC-B223-1372969C649DQ52564361-9F9E5B61-9D30-45FC-B829-1EC7082972A5Q58586363-D9A5A67E-EEA6-470B-AF98-D486A3226D38Q62120724-A756855E-D642-4B3B-AD88-79C07203C4DCQ62120769-28550D72-0F5F-48E6-B17E-6972247D89E8Q62120772-8964B15B-AC19-43BF-8781-180CE07552E8Q62120870-8DE5D738-F5D8-4884-AC5A-03A60728BED8Q62120926-CC621733-679F-4356-BBE2-B587B2E8CDD4Q90908437-6A2E2E19-CF93-48EB-BD98-AC55CA1A0EA8Q91968702-6D06137C-6C01-4A0F-AACC-D76A40F0C2CDQ92199239-DDDA9773-2A13-49A0-AF54-BD53D75FC092Q92336253-9762FAEA-618D-4FF2-8B28-3F251E7F160FQ92464959-59F8BC1C-D102-482E-9473-095FD4F9FD19Q92808139-CC4BD964-92EE-4887-A5C0-C51F14B1F589
P50
description
onderzoeker
@nl
researcher
@en
հետազոտող
@hy
name
Zi-Hui Zhang
@ast
Zi-Hui Zhang
@en
Zi-Hui Zhang
@es
Zi-Hui Zhang
@nl
Zi-Hui Zhang
@sl
type
label
Zi-Hui Zhang
@ast
Zi-Hui Zhang
@en
Zi-Hui Zhang
@es
Zi-Hui Zhang
@nl
Zi-Hui Zhang
@sl
prefLabel
Zi-Hui Zhang
@ast
Zi-Hui Zhang
@en
Zi-Hui Zhang
@es
Zi-Hui Zhang
@nl
Zi-Hui Zhang
@sl
P106
P31
P496
0000-0003-0638-1118