Enhanced electronic-transport modulation in single-crystalline VO2 nanowire-based solid-state field-effect transistors.

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Enhanced electronic-transport modulation in single-crystalline VO2 nanowire-based solid-state field-effect transistors.

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2017 nî lūn-bûn

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2017年の論文

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2017年学术文章

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2017年学术文章

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2017年学术文章

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2017年学术文章

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2017年学术文章

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2017年学术文章

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2017年學術文章

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2017年學術文章

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Enhanced electronic-transport ...... tate field-effect transistors.

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Enhanced electronic-transport ...... tate field-effect transistors.

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Item

label

Enhanced electronic-transport ...... tate field-effect transistors.

@en

Enhanced electronic-transport ...... tate field-effect transistors.

@nl

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Enhanced electronic-transport ...... tate field-effect transistors.

@en

Enhanced electronic-transport ...... tate field-effect transistors.

@nl

P1476

Enhanced electronic-transport ...... state field-effect transistors

@en

P2093

Hidekazu Tanaka

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Masashi Chikanari

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Teruo Kanki

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Tingting Wei

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Tsuyoshi Sekitani

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P2860

Positive-bias gate-controlled metal-insulator transition in ultrathin VO2 channels with TiO2 gate dielectrics

Electrochemical gating-induced reversible and drastic resistance switching in VO2 nanowires.

Dense electron system from gate-controlled surface metal-insulator transition.

Programmable mechanical resonances in MEMS by localized joule heating of phase change materials.

Mott transition in VO2 revealed by infrared spectroscopy and nano-imaging.

The memristive properties of a single VO2 nanowire with switching controlled by self-heating.

Collective bulk carrier delocalization driven by electrostatic surface charge accumulation.

Multistate memory devices based on free-standing VO2/TiO2 microstructures driven by Joule self-heating.

Field Effect and Strongly Localized Carriers in the Metal-Insulator Transition Material VO(2).

The two components of the crystallographic transition in VO2

P2888

s41598-017-17468-x

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17215

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scholarly article

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10.1038/S41598-017-17468-X

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English

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P478

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P50

Takafumi Uemura

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2017-12-08T00:00:00Z

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P698

29222452

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P921

nanowire

P932

5722937

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