Steep-slope hysteresis-free negative capacitance MoS2 transistors.

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Charge carrier injection and transport engineering in two-dimensional transition metal dichalcogenides Scalable high performance radio frequency electronics based on large domain bilayer MoS

P2860

Q59134272-4E5BB2F6-F273-4E6F-84E5-8764C0BBD7B7 Q59137317-B41AB8FC-EF9A-46B5-8827-2A84E2B0E51C

P2860

Steep-slope hysteresis-free negative capacitance MoS2 transistors.

Item

http://www.wikidata.org/entity/Q47236597

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2017 nî lūn-bûn

@nan

2017年の論文

@ja

2017年学术文章

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2017年学术文章

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2017年学术文章

@zh-cn

2017年学术文章

@zh-hans

2017年学术文章

@zh-my

2017年学术文章

@zh-sg

2017年學術文章

@yue

2017年學術文章

@zh-hant

name

Steep-slope hysteresis-free negative capacitance MoS2 transistors.

@en

Steep-slope hysteresis-free negative capacitance MoS2 transistors.

@nl

type

Item

label

Steep-slope hysteresis-free negative capacitance MoS2 transistors.

@en

Steep-slope hysteresis-free negative capacitance MoS2 transistors.

@nl

prefLabel

Steep-slope hysteresis-free negative capacitance MoS2 transistors.

@en

Steep-slope hysteresis-free negative capacitance MoS2 transistors.

@nl

P1476

Steep-slope hysteresis-free negative capacitance MoS2 transistors.

@en

P2093

Ali Shakouri

http://www.w3.org/2001/XMLSchema#string

Chien-Ting Wu

http://www.w3.org/2001/XMLSchema#string

Chun-Jung Su

http://www.w3.org/2001/XMLSchema#string

Chunsheng Jiang

http://www.w3.org/2001/XMLSchema#string

Gang Qiu

http://www.w3.org/2001/XMLSchema#string

Hong Zhou

http://www.w3.org/2001/XMLSchema#string

Kerry D Maize

http://www.w3.org/2001/XMLSchema#string

Mengwei Si

http://www.w3.org/2001/XMLSchema#string

Muhammad A Alam

http://www.w3.org/2001/XMLSchema#string

Nathan J Conrad

http://www.w3.org/2001/XMLSchema#string

P2860

Single-layer MoS2 transistors.

Tunnel field-effect transistors as energy-efficient electronic switches.

Negative capacitance in multidomain ferroelectric superlattices.

Improved Contacts to MoS2 Transistors by Ultra-High Vacuum Metal Deposition.

Integrated circuits based on bilayer MoS₂ transistors.

Negative capacitance in a ferroelectric capacitor.

High performance multilayer MoS2 transistors with scandium contacts.

MoS2 transistors with 1-nanometer gate lengths.

Switching of ferroelectric polarization in epitaxial BaTiO₃ films on silicon without a conducting bottom electrode.

Sustained Sub-60 mV/decade Switching via the Negative Capacitance Effect in MoS2 Transistors.

P2888

s41565-017-0010-1

P304

24-28

http://www.w3.org/2001/XMLSchema#string

P31

scholarly article

P356

10.1038/S41565-017-0010-1

http://www.w3.org/2001/XMLSchema#string

P407

English

P433

http://www.w3.org/2001/XMLSchema#string

P478

http://www.w3.org/2001/XMLSchema#string

P577

2017-12-18T00:00:00Z

http://www.w3.org/2001/XMLSchema#dateTime

P698

29255287

http://www.w3.org/2001/XMLSchema#string

P818

1704.06865

http://www.w3.org/2001/XMLSchema#string

Steep-slope hysteresis-free negative capacitance MoS2 transistors.

about

P2860

P2860

Steep-slope hysteresis-free negative capacitance MoS2 transistors.

description

name

type

label

prefLabel

P1433

P1476

P2093

P2860

P2888

P304

P31

P356

P407

P433

P478

P577

P698

P818

P356

P1433

P1476

P2093

P2860

P2888

P304

P31

P356

P407

P433

P478

P577

P698

P818