A quantitative analytical model for static dipolar disorder broadening of the density of states at organic heterointerfaces.
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Boost up carrier mobility for ferroelectric organic transistor memory via buffering interfacial polarization fluctuationA review of carrier thermoelectric-transport theory in organic semiconductors.Crossover from band-like to thermally activated charge transport in organic transistors due to strain-induced traps.Tailoring the molecular structure to suppress extrinsic disorder in organic transistors.Enhanced carrier mobility and electrical stability of n-channel polymer thin film transistors by use of low-k dielectric buffer layerCharge accumulation at organic semiconductor interfaces due to a permanent dipole moment and its orientational order in bilayer devices
P2860
A quantitative analytical model for static dipolar disorder broadening of the density of states at organic heterointerfaces.
description
2008 nî lūn-bûn
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2008年の論文
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2008年学术文章
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2008年学术文章
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2008年学术文章
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2008年学术文章
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2008年学术文章
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2008年學術文章
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2008年學術文章
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name
A quantitative analytical mode ...... s at organic heterointerfaces.
@en
A quantitative analytical mode ...... s at organic heterointerfaces.
@nl
type
label
A quantitative analytical mode ...... s at organic heterointerfaces.
@en
A quantitative analytical mode ...... s at organic heterointerfaces.
@nl
prefLabel
A quantitative analytical mode ...... s at organic heterointerfaces.
@en
A quantitative analytical mode ...... s at organic heterointerfaces.
@nl
P2860
P356
P1476
A quantitative analytical mode ...... s at organic heterointerfaces.
@en
P2093
Tim Richards
P2860
P304
P356
10.1063/1.2937729
P407
P577
2008-06-01T00:00:00Z