Bismuthene on a SiC substrate: A candidate for a high-temperature quantum spin Hall material.
about
Observation of topological states residing at step edges of WTe2.Recent progress in 2D group-VA semiconductors: from theory to experiment.Lower lattice thermal conductivity in SbAs than As or Sb monolayers: a first-principles study.Bursting at the seams: Rippled monolayer bismuth on NbSe2.Quantum spin Hall insulator with a large bandgap, Dirac fermions, and bilayer graphene analog.Large quantum-spin-Hall gap in single-layer 1T' WSe2.Spin valley and giant quantum spin Hall gap of hydrofluorinated bismuth nanosheet.Higher-Order Topology in BismuthObservation of topologically protected states at crystalline phase boundaries in single-layer WSeEvidence for a quantum spin Hall phase in graphene decorated with BiTe nanoparticlesThree-band Hubbard model for Na2IrO3 : Topological insulator, zigzag antiferromagnet, and Kitaev-Heisenberg material
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P2860
Bismuthene on a SiC substrate: A candidate for a high-temperature quantum spin Hall material.
description
2017 nî lūn-bûn
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2017年の論文
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2017年学术文章
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2017年学术文章
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2017年学术文章
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2017年学术文章
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name
Bismuthene on a SiC substrate: ...... re quantum spin Hall material.
@en
Bismuthene on a SiC substrate: ...... re quantum spin Hall material.
@nl
type
label
Bismuthene on a SiC substrate: ...... re quantum spin Hall material.
@en
Bismuthene on a SiC substrate: ...... re quantum spin Hall material.
@nl
prefLabel
Bismuthene on a SiC substrate: ...... re quantum spin Hall material.
@en
Bismuthene on a SiC substrate: ...... re quantum spin Hall material.
@nl
P2093
P2860
P50
P356
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Bismuthene on a SiC substrate: ...... ure quantum spin Hall material
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P2093
P2860
P304
P356
10.1126/SCIENCE.AAI8142
P407
P577
2017-06-29T00:00:00Z
P698
P818
1608.00812