Doping of RE ions in the 2D ZnO layered system to achieve low-dimensional upconverted persistent luminescence based on asymmetric doping in ZnO systems.
about
Doping of RE ions in the 2D ZnO layered system to achieve low-dimensional upconverted persistent luminescence based on asymmetric doping in ZnO systems.
description
2017 nî lūn-bûn
@nan
2017年の論文
@ja
2017年学术文章
@wuu
2017年学术文章
@zh
2017年学术文章
@zh-cn
2017年学术文章
@zh-hans
2017年学术文章
@zh-my
2017年学术文章
@zh-sg
2017年學術文章
@yue
2017年學術文章
@zh-hant
name
Doping of RE ions in the 2D Zn ...... mmetric doping in ZnO systems.
@en
Doping of RE ions in the 2D Zn ...... mmetric doping in ZnO systems.
@nl
type
label
Doping of RE ions in the 2D Zn ...... mmetric doping in ZnO systems.
@en
Doping of RE ions in the 2D Zn ...... mmetric doping in ZnO systems.
@nl
prefLabel
Doping of RE ions in the 2D Zn ...... mmetric doping in ZnO systems.
@en
Doping of RE ions in the 2D Zn ...... mmetric doping in ZnO systems.
@nl
P2860
P356
P1476
Doping of RE ions in the 2D Zn ...... ymmetric doping in ZnO systems
@en
P2093
Bolong Huang
P2860
P304
12683-12711
P356
10.1039/C7CP01623A
P407
P50
P577
2017-05-01T00:00:00Z