Highly sensitive and fast monolayer WS2 phototransistors realized by SnS nanosheet decoration.
about
Contacts to solution-synthesized SnS nanoribbons: dependence of barrier height on metal work function.Two-step synthesis and characterization of vertically stacked SnS-WS2 and SnS-MoS2 p-n heterojunctions.Improved photoresponse and stable photoswitching of tungsten disulfide single-layer phototransistor decorated with black phosphorus nanosheets
P2860
Highly sensitive and fast monolayer WS2 phototransistors realized by SnS nanosheet decoration.
description
2017 nî lūn-bûn
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2017年の論文
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2017年学术文章
@wuu
2017年学术文章
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2017年学术文章
@zh-cn
2017年学术文章
@zh-hans
2017年学术文章
@zh-my
2017年学术文章
@zh-sg
2017年學術文章
@yue
2017年學術文章
@zh-hant
name
Highly sensitive and fast mono ...... d by SnS nanosheet decoration.
@en
Highly sensitive and fast mono ...... d by SnS nanosheet decoration.
@nl
type
label
Highly sensitive and fast mono ...... d by SnS nanosheet decoration.
@en
Highly sensitive and fast mono ...... d by SnS nanosheet decoration.
@nl
prefLabel
Highly sensitive and fast mono ...... d by SnS nanosheet decoration.
@en
Highly sensitive and fast mono ...... d by SnS nanosheet decoration.
@nl
P2093
P2860
P50
P356
P1433
P1476
Highly sensitive and fast mono ...... ed by SnS nanosheet decoration
@en
P2093
Ruilong Yang
Shanghuai Feng
Songlin Li
P2860
P304
P356
10.1039/C6NR08610A
P407
P577
2017-02-01T00:00:00Z