A new phosphine oxide host based on ortho-disubstituted dibenzofuran for efficient electrophosphorescence: towards high triplet state excited levels and excellent thermal, morphological and efficiency stability.
about
Functionalization of phosphorescent emitters and their host materials by main-group elements for phosphorescent organic light-emitting devices.Bipolar Host Materials for Organic Light-Emitting Diodes.Elevating the triplet energy levels of dibenzofuran-based ambipolar phosphine oxide hosts for ultralow-voltage-driven efficient blue electrophosphorescence: from D-A to D-π-A systems.Modulating the optoelectronic properties of large, conjugated, high-energy gap, quaternary phosphine oxide hosts: impact of the triplet-excited-state location.Convergent modulation of singlet and triplet excited states of phosphine-oxide hosts through the management of molecular structure and functional-group linkages for low-voltage-driven electrophosphorescence.Selective F or Br Functionalization of Dibenzofuran for Application as Host Materials of Phosphorescent Organic Light-Emitting Diodes.Effective host materials for blue/white organic light-emitting diodes by utilizing the twisted conjugation structure in 10-phenyl-9,10-dihydroacridine block.Silicon-based material with spiro-annulated fluorene/triphenylamine as host and exciton-blocking layer for blue electrophosphorescent devices.Controllably tuning excited-state energy in ternary hosts for ultralow-voltage-driven blue electrophosphorescence.New dibenzofuran/spirobifluorene hybrids as thermally stable host materials for efficient phosphorescent organic light-emitting diodes with low efficiency roll-off.Luminescence properties of a Zn(ii) supramolecular framework: easily tunable optical properties by variation of the alkyl substitution of (E)-N-(pyridine-2-ylethylidyne)arylamine ligandsTuning peripheral group density in ternary phosphine oxide hosts for low-voltage-driven yellow PhOLEDsDynamically Adaptive Characteristics of Resonance Variation for Selectively Enhancing Electrical Performance of Organic Semiconductors
P2860
Q38561350-9302C774-1936-4283-903C-9F1BD95318A3Q38643084-ADA34BD1-B66B-4557-9EA4-1DF7B2A3F3DCQ44466142-2787AFEE-7D51-4AD9-95C6-C2C7327AF8DAQ45012636-E660C38D-A026-43C8-A60C-CE060F7F24A5Q45837439-702472AE-8B28-443F-B700-6BBC49719D50Q47762314-62DEE04D-D313-496E-870D-B2DEBC998F90Q50215470-3248C360-4FBC-489E-9B51-3B3D632DB8DCQ50231251-70EBC173-4DB2-4670-9AC4-09D66FE8BCB0Q50241609-9BA40541-E514-43D1-BD8F-A5E878B1B3FDQ50243655-8842D7B8-C11D-46BE-9B48-CA6CFC96D320Q57377218-965AD646-C83D-4324-946E-03650BD95AE2Q58653376-C92EAF27-6EC2-49C1-8BB4-EE578A3C08F0Q58653613-C03D9E38-EA69-4678-B3A8-9ACDF2B4B2C1
P2860
A new phosphine oxide host based on ortho-disubstituted dibenzofuran for efficient electrophosphorescence: towards high triplet state excited levels and excellent thermal, morphological and efficiency stability.
description
2011 nî lūn-bûn
@nan
2011年の論文
@ja
2011年学术文章
@wuu
2011年学术文章
@zh
2011年学术文章
@zh-cn
2011年学术文章
@zh-hans
2011年学术文章
@zh-my
2011年学术文章
@zh-sg
2011年學術文章
@yue
2011年學術文章
@zh-hant
name
A new phosphine oxide host bas ...... ical and efficiency stability.
@en
A new phosphine oxide host bas ...... ical and efficiency stability.
@nl
type
label
A new phosphine oxide host bas ...... ical and efficiency stability.
@en
A new phosphine oxide host bas ...... ical and efficiency stability.
@nl
prefLabel
A new phosphine oxide host bas ...... ical and efficiency stability.
@en
A new phosphine oxide host bas ...... ical and efficiency stability.
@nl
P2093
P2860
P356
P1476
A new phosphine oxide host bas ...... gical and efficiency stability
@en
P2093
Chunmiao Han
Pengfei Yan
Shiyong Liu
Zhaopeng Deng
Zhensong Zhang
P2860
P304
P356
10.1002/CHEM.201100695
P407
P50
P577
2011-06-28T00:00:00Z