about
The thickness-dependent band gap and defect features of ultrathin ZrO2 films studied by spectroscopic ellipsometry.A comprehensive DFT investigation of bulk and low-index surfaces of ZrO2 polymorphs.Double-hole codoped huge-gap semiconductor ZrO2 for visible-light photocatalysis.Defect calculations in semiconductors through a dielectric-dependent hybrid DFT functional: The case of oxygen vacancies in metal oxidesElectronic structure and phase stability of oxide semiconductors: Performance of dielectric-dependent hybrid functional DFT, benchmarked againstGWband structure calculations and experimentsOne-Step Synthesis and Optical Properties of Benzoate- and Biphenolate-Capped ZrO2Nanoparticles
P2860
description
2011 nî lūn-bûn
@nan
2011年の論文
@ja
2011年学术文章
@wuu
2011年学术文章
@zh
2011年学术文章
@zh-cn
2011年学术文章
@zh-hans
2011年学术文章
@zh-my
2011年学术文章
@zh-sg
2011年學術文章
@yue
2011年學術文章
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name
Band gap engineering of bulk ZrO2 by Ti doping.
@en
Band gap engineering of bulk ZrO2 by Ti doping.
@nl
type
label
Band gap engineering of bulk ZrO2 by Ti doping.
@en
Band gap engineering of bulk ZrO2 by Ti doping.
@nl
prefLabel
Band gap engineering of bulk ZrO2 by Ti doping.
@en
Band gap engineering of bulk ZrO2 by Ti doping.
@nl
P2860
P356
P1476
Band gap engineering of bulk ZrO2 by Ti doping.
@en
P2093
Cristiana Di Valentin
Federico Gallino
P2860
P304
17667-17675
P356
10.1039/C1CP21987A
P407
P50
P577
2011-09-07T00:00:00Z