about
Electronic Band Structure and Sub-band-gap Absorption of Nitrogen Hyperdoped SiliconA first-principles study on the phonon transport in layered BiCuOSe.Low lattice thermal conductivity of staneneSite-selective substitutional doping with atomic precision on stepped Al (111) surface by single-atom manipulation.Low-energy structures of clusters supported on metal fcc(110) surfaces.Water-mediated cation intercalation of open-framework indium hexacyanoferrate with high voltage and fast kinetics.The conflicting role of buckled structure in phonon transport of 2D group-IV and group-V materials.First-Principles Prediction of Ultralow Lattice Thermal Conductivity of Dumbbell Silicene: A Comparison with Low-Buckled Silicene.High thermoelectric performance in two-dimensional graphyne sheets predicted by first-principles calculations.Numerical solutions of the time-dependent Schrödinger equation: reduction of the error due to space discretization.Theoretical understanding on band engineering of Mn-doped lead chalcogenides PbX (X = Te, Se, S)Atomic scale study of stress-induced misaligned subsurface layers in KDP crystalsHigh intrinsic ZT in InP3 monolayer at room temperatureInsights into High Conductivity of the Two-Dimensional Iodine-Oxidized sp2-c-COFThe role of Anderson's rule in determining electronic, optical and transport properties of transition metal dichalcogenide heterostructures
P50
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P50
description
researcher
@en
wetenschapper
@nl
հետազոտող
@hy
name
Hezhu Shao
@ast
Hezhu Shao
@en
Hezhu Shao
@es
Hezhu Shao
@nl
Hezhu Shao
@sl
type
label
Hezhu Shao
@ast
Hezhu Shao
@en
Hezhu Shao
@es
Hezhu Shao
@nl
Hezhu Shao
@sl
prefLabel
Hezhu Shao
@ast
Hezhu Shao
@en
Hezhu Shao
@es
Hezhu Shao
@nl
Hezhu Shao
@sl
P106
P31
P496
0000-0002-8945-6973