High-efficiency bulk heterojunction memory devices fabricated using organometallic halide perovskite:poly(N-vinylcarbazole) blend active layers.
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A Strategy to Design High-Density Nanoscale Devices utilizing Vapor Deposition of Metal Halide Perovskite Materials.Hybrid Organic-Inorganic Perovskite Memory with Long-Term Stability in AirEffect of halide-mixing on the switching behaviors of organic-inorganic hybrid perovskite memory.Solution-processable poly(N-vinylcarbazole)-covalently grafted MoS2 nanosheets for nonvolatile rewritable memory devices.To probe the performance of perovskite memory devices: defects property and hysteresis
P2860
High-efficiency bulk heterojunction memory devices fabricated using organometallic halide perovskite:poly(N-vinylcarbazole) blend active layers.
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High-efficiency bulk heterojun ...... etallic halide perovskite:poly
@nl
High-efficiency bulk heterojun ...... arbazole) blend active layers.
@en
type
label
High-efficiency bulk heterojun ...... etallic halide perovskite:poly
@nl
High-efficiency bulk heterojun ...... arbazole) blend active layers.
@en
prefLabel
High-efficiency bulk heterojun ...... etallic halide perovskite:poly
@nl
High-efficiency bulk heterojun ...... arbazole) blend active layers.
@en
P2093
P2860
P356
P1433
P1476
High-efficiency bulk heterojun ...... arbazole) blend active layers.
@en
P2093
Cheng Wang
Qibin Chen
Shanshan Liu
Yaming Cao
P2860
P304
P356
10.1039/C5DT03969J
P407
P577
2015-12-08T00:00:00Z