Rational Hydrogenation for Enhanced Mobility and High Reliability on ZnO-based Thin Film Transistors: From Simulation to Experiment.
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Rational Hydrogenation for Enhanced Mobility and High Reliability on ZnO-based Thin Film Transistors: From Simulation to Experiment.
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2016 nî lūn-bûn
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2016年の論文
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2016年学术文章
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2016年学术文章
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name
Rational Hydrogenation for Enh ...... From Simulation to Experiment.
@en
Rational Hydrogenation for Enh ...... From Simulation to Experiment.
@nl
type
label
Rational Hydrogenation for Enh ...... From Simulation to Experiment.
@en
Rational Hydrogenation for Enh ...... From Simulation to Experiment.
@nl
prefLabel
Rational Hydrogenation for Enh ...... From Simulation to Experiment.
@en
Rational Hydrogenation for Enh ...... From Simulation to Experiment.
@nl
P2093
P356
P1476
Rational Hydrogenation for Enh ...... From Simulation to Experiment
@en
P2093
Changzhong Jiang
Jinchai Li
Kuan-Chang Chang
Ting-Chang Chang
Tsung-Ming Tsai
Xingqiang Liu
P304
P356
10.1021/ACSAMI.5B10220
P407
P577
2016-02-17T00:00:00Z