Selective remanent ambipolar charge transport in polymeric field-effect transistors for high-performance logic circuits fabricated in ambient.
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Experimental evidence that short-range intermolecular aggregation is sufficient for efficient charge transport in conjugated polymersFerroelectric polarization induces electronic nonlinearity in ion-doped conducting polymers.Organic Ferroelectric-Based 1T1T Random Access Memory Cell Employing a Common Dielectric Layer Overcoming the Half-Selection Problem.A Solution-Processable Liquid-Crystalline Semiconductor for Low-Temperature-Annealed Air-Stable N-Channel Field-Effect Transistors.Interfacing Solution-Grown C60 and (3-Pyrrolinium)(CdCl3 ) Single Crystals for High-Mobility Transistor-Based Memory Devices.Design and structure–property relationship of benzothienoisoindigo in organic field effect transistorsUnconventional Molecular Weight Dependence of Charge Transport in the High Mobility n-type Semiconducting Polymer P(NDI2OD-T2)
P2860
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P2860
Selective remanent ambipolar charge transport in polymeric field-effect transistors for high-performance logic circuits fabricated in ambient.
description
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name
Selective remanent ambipolar c ...... ircuits fabricated in ambient.
@en
Selective remanent ambipolar c ...... ircuits fabricated in ambient.
@nl
type
label
Selective remanent ambipolar c ...... ircuits fabricated in ambient.
@en
Selective remanent ambipolar c ...... ircuits fabricated in ambient.
@nl
prefLabel
Selective remanent ambipolar c ...... ircuits fabricated in ambient.
@en
Selective remanent ambipolar c ...... ircuits fabricated in ambient.
@nl
P2093
P2860
P50
P356
P1433
P1476
Selective remanent ambipolar c ...... ircuits fabricated in ambient.
@en
P2093
Magnus Berggren
Robert Forchheimer
Xavier Crispin
P2860
P304
P356
10.1002/ADMA.201403070
P407
P577
2014-10-06T00:00:00Z