Unexpected dominance of vertical dislocations in high-misfit ge/si(001) films and their elimination by deep substrate patterning.
about
Perfect crystals grown from imperfect interfacesAtomic Scale Formation Mechanism of Edge Dislocation Relieving Lattice Strain in a GeSi overlayer on Si(001).Reduction of Dislocations in Single Crystal Diamond by Lateral Growth over a Macroscopic Hole.Ge growth on porous silicon: The effect of buffer porosity on the epilayer crystalline quality
P2860
Unexpected dominance of vertical dislocations in high-misfit ge/si(001) films and their elimination by deep substrate patterning.
description
2013 nî lūn-bûn
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Unexpected dominance of vertical dislocations in high-misfit ge/si
@nl
Unexpected dominance of vertic ...... by deep substrate patterning.
@en
type
label
Unexpected dominance of vertical dislocations in high-misfit ge/si
@nl
Unexpected dominance of vertic ...... by deep substrate patterning.
@en
prefLabel
Unexpected dominance of vertical dislocations in high-misfit ge/si
@nl
Unexpected dominance of vertic ...... by deep substrate patterning.
@en
P2093
P2860
P50
P356
P1433
P1476
Unexpected dominance of vertic ...... n by deep substrate patterning
@en
P2093
Alfonso G Taboada
Elisabeth Müller
Hans von Känel
Leo Miglio
Philippe Niedermann
P2860
P304
P356
10.1002/ADMA.201300550
P407
P50
P577
2013-06-21T00:00:00Z