about
Superior thermal conductivity of single-layer grapheneEngineering nonlinearity into memristors for passive crossbar applicationsTopological transport and atomic tunnelling-clustering dynamics for aged Cu-doped Bi2Te3 crystals.Strong photoluminescence enhancement of MoS(2) through defect engineering and oxygen bonding.Integrated digital inverters based on two-dimensional anisotropic ReS2 field-effect transistors.The positive piezoconductive effect in graphene.A label-free and portable graphene FET aptasensor for children blood lead detectionQuantized conductance coincides with state instability and excess noise in tantalum oxide memristors.Gate-tunable negative longitudinal magnetoresistance in the predicted type-II Weyl semimetal WTe2.Broadband Photovoltaic Detectors Based on an Atomically Thin Heterostructure.Room temperature high-detectivity mid-infrared photodetectors based on black arsenic phosphorus.Van der Waals epitaxial growth and optoelectronics of large-scale WSe2/SnS2 vertical bilayer p-n junctions.In situ observation of electrostatic and thermal manipulation of suspended graphene membranes.Electrical performance and scalability of Pt dispersed SiO2 nanometallic resistance switch.Continuous electrical tuning of the chemical composition of TaO(x)-based memristors.Controlled ripple texturing of suspended graphene and ultrathin graphite membranes.Tunable, ultralow-power switching in memristive devices enabled by a heterogeneous graphene-oxide interface.Anatomy of a nanoscale conduction channel reveals the mechanism of a high-performance memristor.Raman spectra of few-layer phosphorene studied from first-principles calculations.The mechanism of electroforming of metal oxide memristive switches.Two-dimensional quasi-freestanding molecular crystals for high-performance organic field-effect transistors.Hopping transport through defect-induced localized states in molybdenum disulphide.Spin valley and giant quantum spin Hall gap of hydrofluorinated bismuth nanosheet.Quantum Conductance Oscillations in Metal/Molecule/Metal Switches at Room TemperatureVertical WS/SnS van der Waals Heterostructure for Tunneling TransistorsBoron nitride as two dimensional dielectric: Reliability and dielectric breakdownExtremely high thermal conductivity of graphene: Prospects for thermal management applications in nanoelectronic circuitsRobust memristors based on layered two-dimensional materialsElectron-hole asymmetry of spin injection and transport in single-layer grapheneObservation of two resistance switching modes in TiO2 memristive devices electroformed at low currentHighly efficient and ultrastable visible-light photocatalytic water splitting over ReS2Van der Waals Heterostructures for High-Performance Device Applications: Challenges and OpportunitiesObservation of ballistic avalanche phenomena in nanoscale vertical InSe/BP heterostructuresEdge-Epitaxial Growth of InSe Nanowires toward High-Performance Photodetectors
P50
Q28269187-ACC7B4DE-0051-4ED2-A99B-A37CBD2CD672Q29308363-A782C2EB-E0CE-4175-AEAB-0D11502323C8Q34348668-0BF8EC13-6309-49CA-B031-1C43EDBE5E85Q35170152-353ACA61-0F51-4D8E-AF36-AC6FE8C15098Q35608885-93F52D4F-D5BF-4AF8-9660-C1C18C417476Q36084458-0B6F6CCF-4E6E-4AF3-9819-4FE44A69DE1EQ36610880-0CB4E7E3-0001-4F09-A7DA-96696DE42AFDQ36768692-7F8BB3D0-7CC2-4C54-9D76-BDA114A5CF80Q37336171-A1A8D726-F9C9-40A3-8D23-CA846B0BBD7AQ38906905-8524F914-4FA4-4CE1-95D8-53D66786BF60Q40986905-AA09FAE3-B5B9-4FEF-8942-8F6FDD385EBFQ46062170-93D82E48-7DA1-4F93-8F0E-549C659331E2Q46131620-F2C88221-D8FA-4DEE-A4C0-E5F727DCA6B4Q46165259-22279273-9680-4EB6-AAC1-3A51AEAC0D4EQ46613146-326AA105-A3FC-442E-8C17-BB5E8CFB0AE5Q46777128-3952EF90-1590-44F5-A954-031510E965C0Q50855487-ABA44115-66A6-45EE-885C-CC5412E40B02Q50984050-FE379FF0-2E2B-4F46-94DD-0E87BAF9784FQ51638547-7DC1FFC6-43DF-4E72-998D-9C07B66AC7D3Q51956791-E2B12A86-D769-44F7-9B8E-B7E295474879Q53408526-90608A2D-702F-4781-AA76-3D6D8076EE52Q54711242-B579B2B9-4B0D-4089-A6CF-B5B97F3EFAC9Q55265149-EBB40D17-7A68-4C95-9855-58E301F750E6Q59371193-6792DBD2-130D-4D65-B61B-19A90664E320Q60045800-13C97DAB-1CB5-49D5-9D0C-230F287587A0Q60228608-D53F8D5B-3A52-4E78-B656-7924F0EC0C64Q63549462-E50F8313-F948-4F6F-84EA-DF8046232888Q77049385-AF11C257-4636-4B74-890D-6B1FF2CD8701Q83727040-7981AD13-A6CC-4CFC-AE38-460A8ACDE1E8Q84102789-8B9CEEFC-D55A-4838-A6A0-40A5F0ADC2AEQ89412527-603D135E-3642-45E9-BD29-E89C329E155FQ90683742-8DFDF29D-4F4C-4DB0-84AE-F2B7B6EE1B6BQ91142874-F53CDCC0-C3CB-4CCA-A055-46F9203E03A6Q92196177-EE6245E6-7A0C-4A44-A8CD-EDD1A471D1E6
P50
description
onderzoeker
@nl
researcher
@en
հետազոտող
@hy
name
Feng Miao
@ast
Feng Miao
@en
Feng Miao
@es
Feng Miao
@nl
Feng Miao
@sl
type
label
Feng Miao
@ast
Feng Miao
@en
Feng Miao
@es
Feng Miao
@nl
Feng Miao
@sl
prefLabel
Feng Miao
@ast
Feng Miao
@en
Feng Miao
@es
Feng Miao
@nl
Feng Miao
@sl
P214
P106
P214
P31
P496
0000-0002-0962-5424
P7859
lccn-n2012018593