Epitaxial integration of the highly spin-polarized ferromagnetic semiconductor EuO with silicon and GaN.
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Atomic-Scale Engineering of Abrupt Interface for Direct Spin Contact of Ferromagnetic Semiconductor with Silicon.Ultrafast optical tuning of ferromagnetism via the carrier density.High-quality EuO thin films the easy way via topotactic transformationInterface Engineering to Create a Strong Spin Filter Contact to SiliconIntroduction to spin-polarized ballistic hot electron injection and detection in silicon.Oxide nanowires for spintronics: materials and devices.Effect of Gd doping and O deficiency on the Curie temperature of EuO.Surfactant-enabled epitaxy through control of growth mode with chemical boundary conditions.Low-lying electronic structure of EuH, EuOH, and EuO neutrals and anions determined by anion photoelectron spectroscopy and DFT calculations.The electronic properties of mixed valence hydrated europium chloride thin film.Element Specific Versus Integral Structural and Magnetic Properties of Co:ZnO and Gd:GaN Probed with Hard X-ray Absorption Spectroscopy.Nanomorphology Effects in Semiconductors with Native Ferromagnetism: Hierarchical Europium (II) Oxide Tubes Prepared via a Topotactic Nanostructure Transition.A new simple method for point contact Andreev reflection (PCAR) using a self-aligned atomic filament in transition-metal oxides.Crossover from lattice to plasmonic polarons of a spin-polarised electron gas in ferromagnetic EuO.Sensitivity of force-detected NMR spectroscopy with resonator-induced polarizationObservation of anomalous Hall effect in EuO epitaxial thin films grown by a pulse laser depositionContribution of Eu 4f states to the magnetic anisotropy of EuOWeak Anisotropic X-Ray Magnetic Linear Dichroism at the EuM4,5Edges of Ferromagnetic EuO(001): Evidence for4f-State ContributionsHalf-filled orbital and unconventional geometry of a common dopant in Si(001)Photoinduced sign inversion of the anomalous Hall effect in EuO thin filmsGiant third-order magneto-optical rotation in ferromagnetic EuOLutetium-doped EuO films grown by molecular-beam epitaxy
P2860
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P2860
Epitaxial integration of the highly spin-polarized ferromagnetic semiconductor EuO with silicon and GaN.
description
2007 nî lūn-bûn
@nan
2007年の論文
@ja
2007年学术文章
@wuu
2007年学术文章
@zh
2007年学术文章
@zh-cn
2007年学术文章
@zh-hans
2007年学术文章
@zh-my
2007年学术文章
@zh-sg
2007年學術文章
@yue
2007年學術文章
@zh-hant
name
Epitaxial integration of the h ...... ctor EuO with silicon and GaN.
@en
Epitaxial integration of the h ...... ctor EuO with silicon and GaN.
@nl
type
label
Epitaxial integration of the h ...... ctor EuO with silicon and GaN.
@en
Epitaxial integration of the h ...... ctor EuO with silicon and GaN.
@nl
prefLabel
Epitaxial integration of the h ...... ctor EuO with silicon and GaN.
@en
Epitaxial integration of the h ...... ctor EuO with silicon and GaN.
@nl
P2093
P50
P356
P1433
P1476
Epitaxial integration of the h ...... ctor EuO with silicon and GaN.
@en
P2093
Alexander Herrnberger
Andreas Schmehl
Darrell G Schlom
David A Muller
Marco Liberati
Martin Röckerath
Peter Böni
Sebastian Mühlbauer
Stefan Thiel
Tassilo Heeg
P2888
P304
P356
10.1038/NMAT2012
P407
P577
2007-09-16T00:00:00Z
P5875
P6179
1032280684