Organic nonvolatile resistive switching memory based on molecularly entrapped fullerene derivative within a diblock copolymer nanostructure.
about
Focused Role of an Organic Small-Molecule PBD on Performance of the Bistable Resistive SwitchingPolymer-based resistive memory materials and devices.Thermally stable and high ON/OFF ratio non-volatile memory devices based on poly(triphenylamine) with pendent PCBM.Ferrocene-containing poly(fluorenylethynylene)s for nonvolatile resistive memory devices
P2860
Organic nonvolatile resistive switching memory based on molecularly entrapped fullerene derivative within a diblock copolymer nanostructure.
description
2012 nî lūn-bûn
@nan
2012年の論文
@ja
2012年学术文章
@wuu
2012年学术文章
@zh
2012年学术文章
@zh-cn
2012年学术文章
@zh-hans
2012年学术文章
@zh-my
2012年学术文章
@zh-sg
2012年學術文章
@yue
2012年學術文章
@zh-hant
name
Organic nonvolatile resistive ...... block copolymer nanostructure.
@en
Organic nonvolatile resistive ...... block copolymer nanostructure.
@nl
type
label
Organic nonvolatile resistive ...... block copolymer nanostructure.
@en
Organic nonvolatile resistive ...... block copolymer nanostructure.
@nl
prefLabel
Organic nonvolatile resistive ...... block copolymer nanostructure.
@en
Organic nonvolatile resistive ...... block copolymer nanostructure.
@nl
P2093
P2860
P356
P1476
Organic nonvolatile resistive ...... block copolymer nanostructure.
@en
P2093
Hye Jung Chang
Jung Ah Lim
Youn Sang Kim
P2860
P304
P356
10.1002/MARC.201200614
P577
2012-12-27T00:00:00Z