Multilevel resistive switching in planar graphene/SiO2 nanogap structures.

Multilevel resistive switching in planar graphene/SiO2 nanogap structures.

Item
http://www.wikidata.org/entity/Q50957662
Coexistence of memory resistance and memory capacitance in TiO2 solid-state devices.Transparent multi-level resistive switching phenomena observed in ITO/RGO/ITO memory cells by the sol-gel dip-coating methodTowards formation of fibrous woven memory devices from all-carbon electronic fibers.Graphene based non-volatile memory devices.Resistive switching behavior of reduced graphene oxide memory cells for low power nonvolatile device applicationTunable electroluminescence in planar graphene/SiO(2) memristors.Conjugated polymer covalently modified graphene oxide quantum dots for ternary electronic memory devices.Resonant tunneling based graphene quantum dot memristors.Carbon nanotube network-silicon oxide non-volatile switches.Nanogap-Engineerable Electromechanical System for Ultralow Power Memory.
P2860

Multilevel resistive switching in planar graphene/SiO2 nanogap structures.

Item
http://www.wikidata.org/entity/Q50957662
description
2012 nî lūn-bûn
@nan
2012年の論文
@ja
2012年学术文章
@wuu
2012年学术文章
@zh
2012年学术文章
@zh-cn
2012年学术文章
@zh-hans
2012年学术文章
@zh-my
2012年学术文章
@zh-sg
2012年學術文章
@yue
2012年學術文章
@zh-hant
name
Multilevel resistive switching in planar graphene/SiO2 nanogap structures.
@en
Multilevel resistive switching in planar graphene/SiO2 nanogap structures.
@nl
type
label
Multilevel resistive switching in planar graphene/SiO2 nanogap structures.
@en
Multilevel resistive switching in planar graphene/SiO2 nanogap structures.
@nl
prefLabel
Multilevel resistive switching in planar graphene/SiO2 nanogap structures.
@en
Multilevel resistive switching in planar graphene/SiO2 nanogap structures.
@nl
P1433
P1476
P2093
P304
P31
P356
P407
P433
P478
P577
P698
P921
P356
P1433
P1476
Multilevel resistive switching in planar graphene/SiO2 nanogap structures.
@en
P2093
P304
P31
P356
P407
P433
P478
P577
P698
P921