Memory and threshold resistance switching in Ni/NiO core-shell nanowires.
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Ultra-thin resistive switching oxide layers self-assembled by field-induced oxygen migration (FIOM) techniqueFabrication of Ni-Ti-O nanotube arrays by anodization of NiTi alloy and their potential applications.Synthesis of High-Aspect-Ratio Nickel Nanowires by Dropping Method.Density Detection of Aligned Nanowire Arrays Using Terahertz Time-Domain SpectroscopyGrowth of low temperature silicon nano-structures for electronic and electrical energy generation applications.Preparing non-volatile resistive switching memories by tuning the content of Au@air@TiO2-h yolk-shell microspheres in a poly(3-hexylthiophene) layer.Fe/Ni core/shell nanowires and nanorods: a combined first-principles and atomistic simulation study.Bipolar resistive switching with negative differential resistance effect in a Cu/BaTiO3/Ag device.Mass Production of Nanogap Electrodes toward Robust Resistive Random Access Memory.Convertible resistive switching characteristics between memory switching and threshold switching in a single ferritin-based memristor.Light-controlled resistive switching memory of multiferroic BiMnO3 nanowire arrays.Coexistence of resistance switching and negative differential resistance in the α-Fe2O3 nanorod film.Controlled growth of conical nickel oxide nanocrystals and their high performance gas sensing devices for ammonia molecule detection.Electrical-field-driven metal-insulator transition tuned with self-aligned atomic defects.Characterization and Growth Mechanism of Nickel Nanowires Resulting from Reduction of Nickel Formate in Polyol Medium
P2860
Q34440415-779F3CC1-FEFC-4A34-AA74-6AE527B25974Q34728111-4FC81B95-F61B-4132-B5A3-44CF652F3BB6Q36632362-AEBF36DF-3167-4714-A2D4-7E0949A3F80FQ37104416-665D83F4-D88A-44BB-A942-EE900567B238Q39466585-8EF05D38-A3B2-4FF6-BEB1-C823B0E375FBQ40351936-2515B555-19D4-4AD1-B9D6-57DE6BB68734Q43566622-5DD2123D-2D66-438C-9D62-572F8C04BBF7Q50586514-984E6C54-7A89-4C27-9992-92A98C645238Q50635081-9368D64F-A774-45FF-BD8E-7E8B05221C7AQ50663442-8A5B1D0F-F5D4-4621-B0F1-40F7E51259D2Q50751627-60C0CAF4-3322-4AEC-88DB-C4FFF12B0668Q51291660-93358BFE-5A66-4172-B50D-BEDBF6E35DB5Q53508276-B66CAE73-EE52-4908-B195-23938B93B9A0Q53828895-460A44D7-A1C8-4371-83B3-FC14C9BB3DF8Q59128850-48A26DCE-9CE5-4650-903F-6C2BC6D8A342
P2860
Memory and threshold resistance switching in Ni/NiO core-shell nanowires.
description
2011 nî lūn-bûn
@nan
2011年の論文
@ja
2011年学术文章
@wuu
2011年学术文章
@zh
2011年学术文章
@zh-cn
2011年学术文章
@zh-hans
2011年学术文章
@zh-my
2011年学术文章
@zh-sg
2011年學術文章
@yue
2011年學術文章
@zh-hant
name
Memory and threshold resistance switching in Ni/NiO core-shell nanowires.
@en
Memory and threshold resistance switching in Ni/NiO core-shell nanowires.
@nl
type
label
Memory and threshold resistance switching in Ni/NiO core-shell nanowires.
@en
Memory and threshold resistance switching in Ni/NiO core-shell nanowires.
@nl
prefLabel
Memory and threshold resistance switching in Ni/NiO core-shell nanowires.
@en
Memory and threshold resistance switching in Ni/NiO core-shell nanowires.
@nl
P2093
P50
P356
P1433
P1476
Memory and threshold resistance switching in Ni/NiO core-shell nanowires
@en
P2093
Da-Peng Yu
Dong-Sheng Xu
Graham L W Cross
Xiao-Xue Tian
P304
P356
10.1021/NL202017K
P577
2011-10-13T00:00:00Z