Lateral self-aligned p-type In2O3 nanowire arrays epitaxially grown on Si substrates.
about
Micro/Nano gas sensors: a new strategy towards in-situ wafer-level fabrication of high-performance gas sensing chipsGuided Growth of Horizontal p-Type ZnTe NanowiresGuided Growth of Horizontal ZnSe Nanowires and their Integration into High-Performance Blue-UV Photodetectors.Multiferroic CoFe2O4–Pb(Zr0.52Ti0.48)O3 nanofibers by electrospinningp-type conduction in arsenic-doped ZnSe nanowires
P2860
Lateral self-aligned p-type In2O3 nanowire arrays epitaxially grown on Si substrates.
description
2007 nî lūn-bûn
@nan
2007年の論文
@ja
2007年学术文章
@wuu
2007年学术文章
@zh
2007年学术文章
@zh-cn
2007年学术文章
@zh-hans
2007年学术文章
@zh-my
2007年学术文章
@zh-sg
2007年學術文章
@yue
2007年學術文章
@zh-hant
name
Lateral self-aligned p-type In2O3 nanowire arrays epitaxially grown on Si substrates.
@en
Lateral self-aligned p-type In2O3 nanowire arrays epitaxially grown on Si substrates.
@nl
type
label
Lateral self-aligned p-type In2O3 nanowire arrays epitaxially grown on Si substrates.
@en
Lateral self-aligned p-type In2O3 nanowire arrays epitaxially grown on Si substrates.
@nl
altLabel
Lateral Self-Aligned p-Type In2O3Nanowire Arrays Epitaxially Grown on Si Substrates
@en
prefLabel
Lateral self-aligned p-type In2O3 nanowire arrays epitaxially grown on Si substrates.
@en
Lateral self-aligned p-type In2O3 nanowire arrays epitaxially grown on Si substrates.
@nl
P2093
P50
P356
P1433
P1476
Lateral self-aligned p-type In2O3 nanowire arrays epitaxially grown on Si substrates
@en
P2093
P304
P356
10.1021/NL0707914
P407
P577
2007-05-22T00:00:00Z