Cadmium-Free InP/ZnSeS/ZnS Heterostructure-Based Quantum Dot Light-Emitting Diodes with a ZnMgO Electron Transport Layer and a Brightness of Over 10 000 cd m-2.
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Cadmium-Free InP/ZnSeS/ZnS Heterostructure-Based Quantum Dot Light-Emitting Diodes with a ZnMgO Electron Transport Layer and a Brightness of Over 10 000 cd m-2.
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2017 nî lūn-bûn
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2017年の論文
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name
Cadmium-Free InP/ZnSeS/ZnS Het ...... ghtness of Over 10 000 cd m-2.
@en
Cadmium-Free InP/ZnSeS/ZnS Het ...... ghtness of Over 10 000 cd m-2.
@nl
type
label
Cadmium-Free InP/ZnSeS/ZnS Het ...... ghtness of Over 10 000 cd m-2.
@en
Cadmium-Free InP/ZnSeS/ZnS Het ...... ghtness of Over 10 000 cd m-2.
@nl
prefLabel
Cadmium-Free InP/ZnSeS/ZnS Het ...... ghtness of Over 10 000 cd m-2.
@en
Cadmium-Free InP/ZnSeS/ZnS Het ...... ghtness of Over 10 000 cd m-2.
@nl
P2093
P2860
P356
P1433
P1476
Cadmium-Free InP/ZnSeS/ZnS Het ...... ghtness of Over 10 000 cd m-2.
@en
P2093
Han Cheng Yeh
Hao Yue Chen
Heng Zhang
Hung Chia Wang
Mei Rurng Tseng
Ren Jei Chung
Ru Shi Liu
Shuming Chen
P2860
P356
10.1002/SMLL.201603962
P577
2017-01-31T00:00:00Z