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New Fluoride-arsenide Diluted Magnetic Semiconductor (Ba,K)F(Zn,Mn)As with Independent Spin and Charge Doping.Single Crystal Growth and Spin Polarization Measurements of Diluted Magnetic Semiconductor (BaK)(ZnMn)2As2.Hole doping and pressure effects on the II-II-V-based diluted magnetic semiconductor (Ba1−xKx)(Zn1−yMny)2As2
P2860
description
2014 nî lūn-bûn
@nan
2014年の論文
@ja
2014年学术文章
@wuu
2014年学术文章
@zh-cn
2014年学术文章
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2014年学术文章
@zh-my
2014年学术文章
@zh-sg
2014年學術文章
@yue
2014年學術文章
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2014年學術文章
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name
Narrow bandgap in β-BaZn₂As₂ and its chemical origins.
@en
Narrow bandgap in β-BaZn₂As₂ and its chemical origins.
@nl
type
label
Narrow bandgap in β-BaZn₂As₂ and its chemical origins.
@en
Narrow bandgap in β-BaZn₂As₂ and its chemical origins.
@nl
prefLabel
Narrow bandgap in β-BaZn₂As₂ and its chemical origins.
@en
Narrow bandgap in β-BaZn₂As₂ and its chemical origins.
@nl
P2093
P50
P356
P1476
Narrow bandgap in β-BaZn₂As₂ and its chemical origins.
@en
P2093
Fan-Yong Ran
Hideo Hosono
Satoru Matsuishi
Yoshitake Toda
P304
14959-14965
P356
10.1021/JA507890U
P407
P577
2014-10-10T00:00:00Z
P5875
P698
P818
1502.03522