Bulk heterojunction polymer memory devices with reduced graphene oxide as electrodes.
about
Fluorene-based macromolecular nanostructures and nanomaterials for organic (opto)electronics.Functionalized graphitic carbon nitride for metal-free, flexible and rewritable nonvolatile memory device via direct laser-writingUltra-flexible nonvolatile memory based on donor-acceptor diketopyrrolopyrrole polymer blendsComparative studies on single-layer reduced graphene oxide films obtained by electrochemical reduction and hydrazine vapor reduction.Highly Stretchable and Conductive Silver Nanoparticle Embedded Graphene Flake Electrode Prepared by In situ Dual Reduction Reaction.Negative differential resistance and carrier transport of electrically bistable devices based on poly(N-vinylcarbazole)-silver sulfide compositesGraphene and its derivatives: switching ON and OFF.Graphene-based electrodes.Review on the latest design of graphene-based inorganic materials.Polymer-based resistive memory materials and devices.Non-volatile resistive memory devices based on solution-processed ultrathin two-dimensional nanomaterials.Functionalized graphene and other two-dimensional materials for photovoltaic devices: device design and processing.Upgrading Electroresistive Memory from Binary to Ternary Through Single-Atom Substitution in the Molecular Design.Preparation of MoS₂-polyvinylpyrrolidone nanocomposites for flexible nonvolatile rewritable memory devices with reduced graphene oxide electrodes.Memory devices using a mixture of MoS₂ and graphene oxide as the active layer.Synthesis of three-dimensional reduced graphene oxide layer supported cobalt nanocrystals and their high catalytic activity in F-T CO2 hydrogenation.Decreasing the energy consumption of memory devices by enhancing the conjugation extent of the terminal electron-donating moieties within molecules.Direct electro-deposition of graphene from aqueous suspensions.Resonant tunneling based graphene quantum dot memristors.Structural Phase Transition Effect on Resistive Switching Behavior of MoS2 -Polyvinylpyrrolidone Nanocomposites Films for Flexible Memory Devices.In Situ Tuning of Switching Window in a Gate-Controlled Bilayer Graphene-Electrode Resistive Memory Device.Adjusting the Proportion of Electron-Withdrawing Groups in a Graft Functional Polymer for Multilevel Memory Performance.Thermally stable and high ON/OFF ratio non-volatile memory devices based on poly(triphenylamine) with pendent PCBM.Preparation of weavable, all-carbon fibers for non-volatile memory devices.Donor-acceptor oligoimides for application in high-performance electrical memory devices.Electrically bistable memory devices based on poly(triphenylamine)-PCBM hybrids.Fabrication of flexible, all-reduced graphene oxide non-volatile memory devices.Can commonly used hydrazine produce n-type graphene?A supramolecular approach on using poly(fluorenylstyrene)-block-poly(2-vinylpyridine):PCBM composite thin films for non-volatile memory device applications.Enhancement of photogenerated electron transport in dye-sensitized solar cells with introduction of a reduced graphene oxide-TiO2 junction.One-pot, aqueous-phase synthesis of graphene oxide functionalized with heterocyclic groups to give increased solubility in organic solventsFormation of graphene oxide gel via the π-stacked supramolecular self-assemblyElectrical characteristics and carrier transport mechanisms of write-once-read-many-times memory elements based on graphene oxide diodesTransparent, Conductive, and Flexible Graphene Films from Large-Size Graphene OxideLiquid-Exfoliated Black Phosphorous Nanosheet Thin Films for Flexible Resistive Random Access Memory Applications
P2860
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P2860
Bulk heterojunction polymer memory devices with reduced graphene oxide as electrodes.
description
2010 nî lūn-bûn
@nan
2010年の論文
@ja
2010年学术文章
@wuu
2010年学术文章
@zh-cn
2010年学术文章
@zh-hans
2010年学术文章
@zh-my
2010年学术文章
@zh-sg
2010年學術文章
@yue
2010年學術文章
@zh
2010年學術文章
@zh-hant
name
Bulk heterojunction polymer memory devices with reduced graphene oxide as electrodes.
@en
Bulk heterojunction polymer memory devices with reduced graphene oxide as electrodes.
@nl
type
label
Bulk heterojunction polymer memory devices with reduced graphene oxide as electrodes.
@en
Bulk heterojunction polymer memory devices with reduced graphene oxide as electrodes.
@nl
prefLabel
Bulk heterojunction polymer memory devices with reduced graphene oxide as electrodes.
@en
Bulk heterojunction polymer memory devices with reduced graphene oxide as electrodes.
@nl
P2093
P50
P356
P1433
P1476
Bulk heterojunction polymer memory devices with reduced graphene oxide as electrodes
@en
P2093
P304
P356
10.1021/NN100877S
P407
P577
2010-07-01T00:00:00Z