Sub-50 nm Channel Vertical Field-Effect Transistors using Conventional Ink-Jet Printing.

about

Graphene as an electrode for solution-processed electron-transporting organic transistors.

P2860

Q38682481-D27DDEE1-53EF-4E6B-BBCC-76D568050708

P2860

Sub-50 nm Channel Vertical Field-Effect Transistors using Conventional Ink-Jet Printing.

Item

http://www.wikidata.org/entity/Q51098345

description

2016 nî lūn-bûn

@nan

2016年の論文

@ja

2016年学术文章

@wuu

2016年学术文章

@zh

2016年学术文章

@zh-cn

2016年学术文章

@zh-hans

2016年学术文章

@zh-my

2016年学术文章

@zh-sg

2016年學術文章

@yue

2016年學術文章

@zh-hant

name

Sub-50 nm Channel Vertical Field-Effect Transistors using Conventional Ink-Jet Printing.

@en

Sub-50 nm Channel Vertical Field-Effect Transistors using Conventional Ink-Jet Printing.

@nl

type

Item

label

Sub-50 nm Channel Vertical Field-Effect Transistors using Conventional Ink-Jet Printing.

@en

Sub-50 nm Channel Vertical Field-Effect Transistors using Conventional Ink-Jet Printing.

@nl

prefLabel

Sub-50 nm Channel Vertical Field-Effect Transistors using Conventional Ink-Jet Printing.

@en

Sub-50 nm Channel Vertical Field-Effect Transistors using Conventional Ink-Jet Printing.

@nl

P1476

Sub-50 nm Channel Vertical Field-Effect Transistors using Conventional Ink-Jet Printing

@en

P2093

Christian Kübel

http://www.w3.org/2001/XMLSchema#string

Christian Reitz

http://www.w3.org/2001/XMLSchema#string

Falk von Seggern

http://www.w3.org/2001/XMLSchema#string

Horst Hahn

http://www.w3.org/2001/XMLSchema#string

Manuel Rommel

http://www.w3.org/2001/XMLSchema#string

Simone Dehm

http://www.w3.org/2001/XMLSchema#string

Tessy Theres Baby

http://www.w3.org/2001/XMLSchema#string

Wolfgang Wenzel

http://www.w3.org/2001/XMLSchema#string

P2860

Self-aligned, vertical-channel, polymer field-effect transistors.

Integrated optoelectronic devices based on conjugated polymers

Vertically stacked multi-heterostructures of layered materials for logic transistors and complementary inverters

New approaches to nanofabrication: molding, printing, and other techniques.

Dielectric properties of binary solvent mixtures of dimethyl sulfoxide with water.

25th anniversary article: organic field-effect transistors: the path beyond amorphous silicon

Vertical nanowire heterojunction devices based on a clean Si/Ge interface.

Ink-Jet Printed CMOS Electronics from Oxide Semiconductors.

Printed, sub-2V ZnO electrolyte gated transistors and inverters on plastic.

Building bridges to North Korea. Interview by Joerg Heber.

P31

scholarly article

P356

10.1002/ADMA.201603858

http://www.w3.org/2001/XMLSchema#string

P407

English

P433

http://www.w3.org/2001/XMLSchema#string

P478

http://www.w3.org/2001/XMLSchema#string

P50

Subho Dasgupta

Pascal Friederich

P577

2016-11-18T00:00:00Z

http://www.w3.org/2001/XMLSchema#dateTime

P698

27859773

http://www.w3.org/2001/XMLSchema#string

Sub-50 nm Channel Vertical Field-Effect Transistors using Conventional Ink-Jet Printing.

about

P2860

P2860

Sub-50 nm Channel Vertical Field-Effect Transistors using Conventional Ink-Jet Printing.

description

name

type

label

prefLabel

P1433

P1476

P2093

P2860

P31

P356

P407

P433

P478

P50

P577

P698

P356

P1433

P1476

P2093

P2860

P31

P356

P407

P433

P478

P50

P577

P698