Controlled Generation of a p-n Junction in a Waveguide Integrated Graphene Photodetector.
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Recent Progress on Localized Field Enhanced Two-dimensional Material Photodetectors from Ultraviolet-Visible to Infrared.Photogating in Low Dimensional Photodetectors.Organics filled one-dimensional TiO2 nanowires array ultraviolet detector with enhanced photo-conductivity and dark-resistivity.The ultrafast dynamics and conductivity of photoexcited graphene at different Fermi energies.
P2860
Controlled Generation of a p-n Junction in a Waveguide Integrated Graphene Photodetector.
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2016 nî lūn-bûn
@nan
2016年の論文
@ja
2016年学术文章
@wuu
2016年学术文章
@zh
2016年学术文章
@zh-cn
2016年学术文章
@zh-hans
2016年学术文章
@zh-my
2016年学术文章
@zh-sg
2016年學術文章
@yue
2016年學術文章
@zh-hant
name
Controlled Generation of a p-n Junction in a Waveguide Integrated Graphene Photodetector.
@en
Controlled Generation of a p-n Junction in a Waveguide Integrated Graphene Photodetector.
@nl
type
label
Controlled Generation of a p-n Junction in a Waveguide Integrated Graphene Photodetector.
@en
Controlled Generation of a p-n Junction in a Waveguide Integrated Graphene Photodetector.
@nl
prefLabel
Controlled Generation of a p-n Junction in a Waveguide Integrated Graphene Photodetector.
@en
Controlled Generation of a p-n Junction in a Waveguide Integrated Graphene Photodetector.
@nl
P2093
P50
P1433
P1476
Controlled Generation of a p-n Junction in a Waveguide Integrated Graphene Photodetector.
@en
P2093
Lukas Dobusch
Michael Krall
Ole Bethge
Simone Schuler
Thomas Mueller
P304
P356
10.1021/ACS.NANOLETT.6B03374
P407
P577
2016-10-07T00:00:00Z
P698
P818
1610.05526