Remote Plasma Oxidation and Atomic Layer Etching of MoS2.
about
HfSe2 and ZrSe2: Two-dimensional semiconductors with native high-κ oxides.Semiconductor SERS enhancement enabled by oxygen incorporation.Is Single Layer MoS2 Stable in the Air?Rapid Wafer-Scale Growth of Polycrystalline 2H-MoS2 by Pulsed Metalorganic Chemical Vapor Deposition.Oxide-mediated recovery of field-effect mobility in plasma-treated MoS2.
P2860
Remote Plasma Oxidation and Atomic Layer Etching of MoS2.
description
2016 nî lūn-bûn
@nan
2016年の論文
@ja
2016年学术文章
@wuu
2016年学术文章
@zh
2016年学术文章
@zh-cn
2016年学术文章
@zh-hans
2016年学术文章
@zh-my
2016年学术文章
@zh-sg
2016年學術文章
@yue
2016年學術文章
@zh-hant
name
Remote Plasma Oxidation and Atomic Layer Etching of MoS2.
@en
Remote Plasma Oxidation and Atomic Layer Etching of MoS2.
@nl
type
label
Remote Plasma Oxidation and Atomic Layer Etching of MoS2.
@en
Remote Plasma Oxidation and Atomic Layer Etching of MoS2.
@nl
prefLabel
Remote Plasma Oxidation and Atomic Layer Etching of MoS2.
@en
Remote Plasma Oxidation and Atomic Layer Etching of MoS2.
@nl
P2093
P356
P1476
Remote Plasma Oxidation and Atomic Layer Etching of MoS2.
@en
P2093
Angelica Azcatl
Jiyoung Kim
Lanxia Cheng
Robert M Wallace
Xiaoye Qin
P304
19119-19126
P356
10.1021/ACSAMI.6B04719
P407
P577
2016-07-07T00:00:00Z