Proximity effects induced in graphene by magnetic insulators: first-principles calculations on spin filtering and exchange-splitting gaps.
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Atomic-Scale Engineering of Abrupt Interface for Direct Spin Contact of Ferromagnetic Semiconductor with Silicon.Van der Waals engineering of ferromagnetic semiconductor heterostructures for spin and valleytronics.Gate-Tunable Spin Transport and Giant Electroresistance in Ferromagnetic Graphene Vertical Heterostructures.Graphene-multiferroic interfaces for spintronics applications.Electrically controllable sudden reversals in spin and valley polarization in silicene.Graphene spintronics.Strong interfacial exchange field in the graphene/EuS heterostructure.Weak Delocalization in Graphene on a Ferromagnetic Insulating Film.Tunable Dirac points and high spin polarization in ferromagnetic-strain graphene superlattices.Scale-invariant large nonlocality in polycrystalline graphene.Spin-selectable, region-tunable negative differential resistance in graphene double ferromagnetic barriers.The magnetic proximity effect and electrical field tunable valley degeneracy in MoS2/EuS van der Waals heterojunctions.Nanomorphology Effects in Semiconductors with Native Ferromagnetism: Hierarchical Europium (II) Oxide Tubes Prepared via a Topotactic Nanostructure Transition.Magnetic Proximity Effects in Transition-Metal Dichalcogenides: Converting Excitons.Giant Spin Lifetime Anisotropy in Graphene Induced by Proximity Effects.A Route to Permanent Valley Polarization in Monolayer MoS2.Spin-induced band modifications of graphene through intercalation of magnetic iron atoms.Large positive linear magnetoresistance in the two-dimensional t 2g electron gas at the EuO/SrTiO3 interface.Magnetoelectric oxide films for spin manipulation in grapheneBias-driven spontaneous spin-valley polarization in monolayer transition-metal dichalcogenidesSpin Logic via Controlled Correlation in Nanomagnet–Dirac-Fermion HeterostructuresHighly spin-polarized Dirac fermions at the graphene/Co interfaceSubstrate induced changes in atomically thin 2-dimensional semiconductors: Fundamentals, engineering, and applicationsTunnel and electrostatic coupling in graphene-LaAlO3/SrTiO3 hybrid systems
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P2860
Proximity effects induced in graphene by magnetic insulators: first-principles calculations on spin filtering and exchange-splitting gaps.
description
2013 nî lūn-bûn
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2013年の論文
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2013年学术文章
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name
Proximity effects induced in g ...... g and exchange-splitting gaps.
@en
Proximity effects induced in g ...... g and exchange-splitting gaps.
@nl
type
label
Proximity effects induced in g ...... g and exchange-splitting gaps.
@en
Proximity effects induced in g ...... g and exchange-splitting gaps.
@nl
prefLabel
Proximity effects induced in g ...... g and exchange-splitting gaps.
@en
Proximity effects induced in g ...... g and exchange-splitting gaps.
@nl
P2860
P50
P1476
Proximity effects induced in g ...... ng and exchange-splitting gaps
@en
P2093
P2860
P304
P356
10.1103/PHYSREVLETT.110.046603
P407
P577
2013-01-24T00:00:00Z