Field-effect transistors based on wafer-scale, highly uniform few-layer p-type WSe2.

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Graphene-Contacted Ultrashort Channel Monolayer MoS2 Transistors.Performance of field-effect transistors based on Nb(x)W(1-x)S2 monolayers.Controlled Layer Thinning and p-Type Doping of WSe2 by Vapor XeF2

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Field-effect transistors based on wafer-scale, highly uniform few-layer p-type WSe2.

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http://www.wikidata.org/entity/Q51571238

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2016 nî lūn-bûn

@nan

2016年の論文

@ja

2016年学术文章

@wuu

2016年学术文章

@zh

2016年学术文章

@zh-cn

2016年学术文章

@zh-hans

2016年学术文章

@zh-my

2016年学术文章

@zh-sg

2016年學術文章

@yue

2016年學術文章

@zh-hant

name

Field-effect transistors based on wafer-scale, highly uniform few-layer p-type WSe2.

@en

Field-effect transistors based on wafer-scale, highly uniform few-layer p-type WSe2.

@nl

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Item

label

Field-effect transistors based on wafer-scale, highly uniform few-layer p-type WSe2.

@en

Field-effect transistors based on wafer-scale, highly uniform few-layer p-type WSe2.

@nl

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Field-effect transistors based on wafer-scale, highly uniform few-layer p-type WSe2.

@en

Field-effect transistors based on wafer-scale, highly uniform few-layer p-type WSe2.

@nl

P1476

Field-effect transistors based on wafer-scale, highly uniform few-layer p-type WSe2.

@en

P2093

Alexey Tarasov

http://www.w3.org/2001/XMLSchema#string

Corey A Joiner

http://www.w3.org/2001/XMLSchema#string

Eric M Vogel

http://www.w3.org/2001/XMLSchema#string

Georges Pavlidis

http://www.w3.org/2001/XMLSchema#string

Meng-Yen Tsai

http://www.w3.org/2001/XMLSchema#string

Philip M Campbell

http://www.w3.org/2001/XMLSchema#string

Samuel Graham

http://www.w3.org/2001/XMLSchema#string

W Jud Ready

http://www.w3.org/2001/XMLSchema#string

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Resonant tunnelling and negative differential conductance in graphene transistors.

Electronics and optoelectronics of two-dimensional transition metal dichalcogenides.

Boron nitride substrates for high-quality graphene electronics.

Single-layer MoS2 transistors.

Influence of stoichiometry on the optical and electrical properties of chemical vapor deposition derived MoS2.

Mechanical exfoliation and characterization of single- and few-layer nanosheets of WSe₂ , TaS₂ , and TaSe₂.

Sensing behavior of atomically thin-layered MoS2 transistors.

Electrically tunable excitonic light-emitting diodes based on monolayer WSe2 p-n junctions.

Strong photoluminescence enhancement of MoS(2) through defect engineering and oxygen bonding.

Excited excitonic states in 1L, 2L, 3L, and bulk WSe2 observed by resonant Raman spectroscopy.

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2268-2276

http://www.w3.org/2001/XMLSchema#string

P31

scholarly article

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10.1039/C5NR06180F

http://www.w3.org/2001/XMLSchema#string

P407

English

P433

http://www.w3.org/2001/XMLSchema#string

P478

http://www.w3.org/2001/XMLSchema#string

P577

2016-01-08T00:00:00Z

http://www.w3.org/2001/XMLSchema#dateTime

P698

26743173

http://www.w3.org/2001/XMLSchema#string

Field-effect transistors based on wafer-scale, highly uniform few-layer p-type WSe2.

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P2860

P2860

Field-effect transistors based on wafer-scale, highly uniform few-layer p-type WSe2.

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P1433

P1476

P2093

P2860

P304

P31

P356

P407

P433

P478

P577

P698

P356

P1433

P1476

P2093

P2860

P304

P31

P356

P407

P433

P478

P577

P698