Quantifying the quantum gate fidelity of single-atom spin qubits in silicon by randomized benchmarking.
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Electrically controlling single-spin qubits in a continuous microwave fieldGate fidelity and coherence of an electron spin in an Si/SiGe quantum dot with micromagnetA reconfigurable cryogenic platform for the classical control of quantum processors.A photonic platform for donor spin qubits in siliconSilicon quantum processor with robust long-distance qubit couplings.A fault-tolerant addressable spin qubit in a natural silicon quantum dot.A quantum-dot spin qubit with coherence limited by charge noise and fidelity higher than 99.9.Resonantly driven CNOT gate for electron spins.What Randomized Benchmarking Actually Measures.Comparing Experiments to the Fault-Tolerance Threshold.
P2860
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P2860
Quantifying the quantum gate fidelity of single-atom spin qubits in silicon by randomized benchmarking.
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2015 nî lūn-bûn
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Quantifying the quantum gate f ...... on by randomized benchmarking.
@en
Quantifying the quantum gate f ...... on by randomized benchmarking.
@nl
type
label
Quantifying the quantum gate f ...... on by randomized benchmarking.
@en
Quantifying the quantum gate f ...... on by randomized benchmarking.
@nl
prefLabel
Quantifying the quantum gate f ...... on by randomized benchmarking.
@en
Quantifying the quantum gate f ...... on by randomized benchmarking.
@nl
P2093
P50
P356
P1476
Quantifying the quantum gate f ...... con by randomized benchmarking
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P2093
D N Jamieson
J C McCallum
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P356
10.1088/0953-8984/27/15/154205
P577
2015-03-18T00:00:00Z