Potassium Postdeposition Treatment-Induced Band Gap Widening at Cu(In,Ga)Se₂ Surfaces--Reason for Performance Leap?
about
Effect of the KF post-deposition treatment on grain boundary properties in Cu(In, Ga)Se2 thin films.Impact of Wide-Ranging Nanoscale Chemistry on Band Structure at Cu(In, Ga)Se2 Grain Boundaries.Si-Doped Cu(In,Ga)Se2 Photovoltaic Devices with Energy Conversion Efficiencies Exceeding 16.5% without a Buffer LayerInjection Current Barrier Formation for RbF Postdeposition-Treated Cu(In,Ga)Se2 -Based Solar Cells
P2860
Potassium Postdeposition Treatment-Induced Band Gap Widening at Cu(In,Ga)Se₂ Surfaces--Reason for Performance Leap?
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Potassium Postdeposition Treat ...... --Reason for Performance Leap?
@en
Potassium Postdeposition Treat ...... --Reason for Performance Leap?
@nl
type
label
Potassium Postdeposition Treat ...... --Reason for Performance Leap?
@en
Potassium Postdeposition Treat ...... --Reason for Performance Leap?
@nl
prefLabel
Potassium Postdeposition Treat ...... --Reason for Performance Leap?
@en
Potassium Postdeposition Treat ...... --Reason for Performance Leap?
@nl
P2093
P356
P1476
Potassium Postdeposition Treat ...... --Reason for Performance Leap?
@en
P2093
Ayodhya N Tiwari
Eiji Ikenaga
Evelyn Handick
Fabian Pianezzi
Jan-Hendrik Alsmeier
Leonard Köhler
Marcus Bär
Mihaela Gorgoi
Patrick Reinhard
Regan G Wilks
P304
27414-27420
P356
10.1021/ACSAMI.5B09231
P407
P577
2015-12-03T00:00:00Z