Precisely Controlled Ultrastrong Photoinduced Doping at Graphene-Heterostructures Assisted by Trap-State-Mediated Charge Transfer.
about
Environment-insensitive and gate-controllable photocurrent enabled by bandgap engineering of MoS2 junctions.X-ray induced electrostatic graphene doping via defect charging in gate dielectric.Efficient Flexible Organic/Inorganic Hybrid Perovskite Light-Emitting Diodes Based on Graphene Anode.Epitaxial Ultrathin Organic Crystals on Graphene for High-Efficiency Phototransistors.
P2860
Precisely Controlled Ultrastrong Photoinduced Doping at Graphene-Heterostructures Assisted by Trap-State-Mediated Charge Transfer.
description
2015 nî lūn-bûn
@nan
2015年の論文
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2015年学术文章
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2015年学术文章
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2015年学术文章
@zh-cn
2015年学术文章
@zh-hans
2015年学术文章
@zh-my
2015年学术文章
@zh-sg
2015年學術文章
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2015年學術文章
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name
Precisely Controlled Ultrastro ...... tate-Mediated Charge Transfer.
@en
Precisely Controlled Ultrastro ...... tate-Mediated Charge Transfer.
@nl
type
label
Precisely Controlled Ultrastro ...... tate-Mediated Charge Transfer.
@en
Precisely Controlled Ultrastro ...... tate-Mediated Charge Transfer.
@nl
prefLabel
Precisely Controlled Ultrastro ...... tate-Mediated Charge Transfer.
@en
Precisely Controlled Ultrastro ...... tate-Mediated Charge Transfer.
@nl
P2093
P2860
P356
P1433
P1476
Precisely Controlled Ultrastro ...... State-Mediated Charge Transfer
@en
P2093
Chun-Hsiang Chen
Chun-Wei Chen
Fu-Yu Shih
Min-Chuan Shih
Min-Ken Li
Po-Hsun Ho
Shao-Sian Li
Wei-Ting Chen
Yi-Siang Shih
Yih-Ren Chang
P2860
P304
P356
10.1002/ADMA.201503592
P407
P577
2015-10-28T00:00:00Z